Flash Memory IC Chip MT29F2G08AACWP - Micron Technology - 2Gb x8, x16: NAND Flash Memory

Quick Detail:

2Gb x8, x16: NAND Flash Memory

Description:

• Density2

: 2Gb (single die)

• Device width: x8, x16

• Configuration:

# of die # of CE# # of R/B# I/O

1 1 1 Common

• VCC: 2.7–3.6V

• VCC: 1.65–1.95V

• Package

– 48-pin TSOP type I CPL3

(lead-free plating, 3.3V only)

– 63-ball VFBGA (lead-free, 1.8V only)

• Operating temperature:

– Commercial (0°C to +70°C)

– Extended (–40°C to +85°C)

Applications:

• Open NAND Flash Interface (ONFI) 1.0-compliant

• Single-level cell (SLC) technology

• Organization

– Page size:

• x8: 2,112 bytes (2,048 + 64 bytes)

• x16: 1,056 words (1,024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Device size: 2Gb: 2,048 blocks

• READ performance

– Random READ: 25µs

– Sequential READ: 25ns (3.3V)

– Sequential READ: 35ns (1.8V)

• WRITE performance

– PROGRAM PAGE: 220µs (TYP, 3.3V)

– PROGRAM PAGE: 300µs (TYP, 1.8V)

– BLOCK ERASE: 500µs (TYP)

• Data retention: 10 years

• Endurance: 100,000 PROGRAM/ERASE cycles

• First block (block address 00h) guaranteed to be valid with ECC when shipped from factory1

• Industry-standard basic NAND Flash command set

• Advanced command set:

– PROGRAM PAGE CACHE MODE

– PAGE READ CACHE MODE

– One-time programmable (OTP) commands

– BLOCK LOCK (1.8V only)

– PROGRAMMABLE DRIVE STRENGTH

– READ UNIQUE ID

• Operation status byte provides a software method of detecting:

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/busy# (R/B#) signal provides a hardware method of detecting operation completion

• WP# signal: write protect entire device

• RESET required as first command after power-up

• INTERNAL DATA MOVE operations supported

• Alternate method of device initialization

(Nand_Init) after power up4 (Contact Factory)

Specifications:

Competitive Advantage:

Warranty :180days for all goods

Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.

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