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Common Cathode Structure Schottky Diode For Polarity Protection
Applications
MBR10200.pdf
A Schottky diode is a metal-semiconductor device made of a noble
metal (gold, silver, aluminum, platinum, etc.) A as the positive
electrode and an N-type semiconductor B as the negative electrode,
and the potential barrier formed on the contact surface of the two
has rectification characteristics. Because there are a large number
of electrons in the N-type semiconductor and only a small amount of
free electrons in the noble metal, the electrons diffuse from B
with high concentration to A with low concentration. Obviously,
there are no holes in metal A, and there is no diffusion of holes
from A to B. As electrons continue to diffuse from B to A, the
electron concentration on the surface of B gradually decreases, and
the surface electrical neutrality is destroyed, thus forming a
potential barrier, and its electric field direction is B→A.
However, under the action of the electric field, the electrons in A
will also produce a drift motion from A→B, thus weakening the
electric field formed due to the diffusion motion. When a space
charge region of a certain width is established, the electron drift
movement caused by the electric field and the electron diffusion
movement caused by different concentrations reach a relative
balance, forming a Schottky barrier.
Features
1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
Applications
1. High frequency switch Power supply
2. Free wheeling diodes, Polarity protection applications
MAIN CHARACTERISTICS
IF(AV) | 10(2×5)A |
VF(max) | 0.7V (@Tj=125°C) |
Tj | 175 °C |
VRRM | 100 V |
PRODUCT MESSAGE
Model | Marking | Package |
MBR10100 | MBR10100 | TO-220C |
MBRF10100 | MBRF10100 | TO-220F |
MBR10100S | MBR10100S | TO-263 |
MBR10100R | MBR10100R | TO-252 |
MBR10100V | MBR10100V | TO-251 |
MBR10100C | MBR10100C | TO-220 |
ABSOLUTE RATINGS (Tc=25°C)
Parameter | Symbol | Value | Unit | ||
Repetitive peak reverse voltage | VRRM | 100 | V | ||
Maximum DC blocking voltage | VDC | 100 | V | ||
Average forward current | TC=150°C (TO-220/263/252 )TC=125°C(TO-220F) | per device per diode | IF(AV) | 10 5 | A |
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod) | IFSM | 120 | A | ||
Maximum junction temperature | Tj | 175 | °C | ||
Storage temperature range | TSTG | -40~+150 | °C |