Common Cathode Structure Schottky Diode For Polarity Protection Applications

Brand Name:Uchi
Certification:CE / RoHS / ISO9001 / UL
Model Number:MBR10200
Minimum Order Quantity:Negotiation
Delivery Time:Negotiation
Payment Terms:T/T
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Location: Dongguan Guangdong China
Address: Room 810, Unit 2, Building 5, Huixing Commercial Center, Dongsheng Road No.1, Zhongshan Dong, Shilong Town Dongguan, GUANGDONG, 523326 CN
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Common Cathode Structure Schottky Diode For Polarity Protection Applications​

MBR10200.pdf


A Schottky diode is a metal-semiconductor device made of a noble metal (gold, silver, aluminum, platinum, etc.) A as the positive electrode and an N-type semiconductor B as the negative electrode, and the potential barrier formed on the contact surface of the two has rectification characteristics. Because there are a large number of electrons in the N-type semiconductor and only a small amount of free electrons in the noble metal, the electrons diffuse from B with high concentration to A with low concentration. Obviously, there are no holes in metal A, and there is no diffusion of holes from A to B. As electrons continue to diffuse from B to A, the electron concentration on the surface of B gradually decreases, and the surface electrical neutrality is destroyed, thus forming a potential barrier, and its electric field direction is B→A. However, under the action of the electric field, the electrons in A will also produce a drift motion from A→B, thus weakening the electric field formed due to the diffusion motion. When a space charge region of a certain width is established, the electron drift movement caused by the electric field and the electron diffusion movement caused by different concentrations reach a relative balance, forming a Schottky barrier.


Features

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product

Applications

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications

MAIN CHARACTERISTICS

IF(AV)

10(2×5)A

VF(max)

0.7V (@Tj=125°C)

Tj

175 °C

VRRM

100 V

PRODUCT MESSAGE

Model

Marking

Package

MBR10100

MBR10100

TO-220C

MBRF10100

MBRF10100

TO-220F

MBR10100S

MBR10100S

TO-263

MBR10100R

MBR10100R

TO-252

MBR10100V

MBR10100V

TO-251

MBR10100C

MBR10100C

TO-220

ABSOLUTE RATINGS (Tc=25°C)

Parameter


Symbol


Value


Unit

Repetitive peak reverse voltage

VRRM

100

V

Maximum DC blocking voltage

VDC

100

V

Average forward current

TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)


per device


per diode

IF(AV)

10 5

A


Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod)

IFSM

120

A

Maximum junction temperature

Tj

175

°C

Storage temperature range

TSTG

-40~+150

°C


China Common Cathode Structure Schottky Diode For Polarity Protection Applications supplier

Common Cathode Structure Schottky Diode For Polarity Protection Applications

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