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Guard Ring For Overvoltage Protection Schottky Diode With RoHS
Advantage
SBD has the advantages of high switching frequency and low forward
voltage, but its reverse breakdown voltage is relatively low,
mostly not higher than 60V, and the highest is only about 100V,
which limits its application range. Such as freewheeling diodes of
power switching devices in switching power supply (SMPS) and power
factor correction (PFC) circuits, high-frequency rectifier diodes
above 100V for transformer secondary, high-speed diodes of
600V~1.2kV in RCD snubber circuits, and For 600V diodes used in PFC
step-up, only fast recovery epitaxial diodes (FRED) and ultra-fast
recovery diodes (UFRD) are used. The reverse recovery time Trr of
UFRD is also more than 20ns, which cannot meet the needs of
1MHz~3MHz SMPS in fields such as space stations. Even for an SMPS
with hard switching at 100kHz, due to the large conduction loss and
switching loss of UFRD, the case temperature is high, and a large
heat sink is required, which increases the size and weight of the
SMPS, which does not meet the miniaturization and thinning
requirements. development trend. Therefore, the development of
high-voltage SBDs above 100V has always been a research topic and a
focus of attention. In recent years, SBD has made breakthrough
progress, 150V and 200V high-voltage SBDs have been listed, and the
SBD of more than 1kV made of new materials has also been
successfully developed, thus injecting new vitality and vitality
into its application.
Features
1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
Applications
1. High frequency switch Power supply
2. Free wheeling diodes, Polarity protection applications
MAIN CHARACTERISTICS
IF(AV) | 10(2×5)A |
VF(max) | 0.7V (@Tj=125°C) |
Tj | 175 °C |
VRRM | 100 V |
PRODUCT MESSAGE
Model | Marking | Package |
MBR10100 | MBR10100 | TO-220C |
MBRF10100 | MBRF10100 | TO-220F |
MBR10100S | MBR10100S | TO-263 |
MBR10100R | MBR10100R | TO-252 |
MBR10100V | MBR10100V | TO-251 |
MBR10100C | MBR10100C | TO-220 |
ABSOLUTE RATINGS (Tc=25°C)
Parameter | Symbol | Value | Unit | ||
Repetitive peak reverse voltage | VRRM | 100 | V | ||
Maximum DC blocking voltage | VDC | 100 | V | ||
Average forward current | TC=150°C (TO-220/263/252 )TC=125°C(TO-220F) | per device per diode | IF(AV) | 10 5 | A |
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod) | IFSM | 120 | A | ||
Maximum junction temperature | Tj | 175 | °C | ||
Storage temperature range | TSTG | -40~+150 | °C |