SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

Brand Name:UCHI
Certification:Completed
Model Number:D882
Minimum Order Quantity:1000PCS
Delivery Time:3weeks
Payment Terms:T/T, Western Union
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Verified Supplier
Location: Dongguan Guangdong China
Address: Room 810, Unit 2, Building 5, Huixing Commercial Center, Dongsheng Road No.1, Zhongshan Dong, Shilong Town Dongguan, GUANGDONG, 523326 CN
Supplier`s last login times: within 1 hours
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Product Details

SOT-89 D882 Plastic-Encapsulate Transistors


Features
Power dissipation

MAXIMUM RATINGS (Ta=25 unless otherwise noted)


SymbolParameterValueUnit
VCBOCollector-Base Voltage40V
VCEOCollector-Emitter Voltage30V
VEBOEmitter-Base Voltage6V
ICCollector Current -Continuous3A
PCCollector Power Dissipation0.5W
TJJunction Temperature150
TstgStorage Temperature-55~150

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC = 100μA, IE=040V
Collector-emitter breakdown voltageV(BR)CEOIC = 10mA, IB=030V
Emitter-base breakdown voltageV(BR)EBOIE= 100μA, IC=06V
Collector cut-off currentICBOVCB= 40V, IE=01µA
Collector cut-off currentICEOVCE= 30V, IB=010µA
Emitter cut-off currentIEBOVEB= 6V, IC=01µA
DC current gainhFE(1)VCE=2V, IC= 1A60400
hFE(2)VCE=2V, IC= 100mA32
Collector-emitter saturation voltageVCE(sat)IC= 2A, IB= 0.2 A0.5V
Base-emitter saturation voltageVBE(sat)IC= 2A, IB= 0.2 A1.5V
Transition frequencyfTVCE= 5V , Ic=0.1A f =10MHz50MHz

CLASSIFICATION OF hFE(1)


RankROYGR
Range60-120100-200160-320200-400

Typical Characteristics

China SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation supplier

SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

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