6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
Brand Name:ANG
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Model Number:ANG-H6
Minimum Order Quantity:100
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Shenzhen Guangdong China
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Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109
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Product Details
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
| SiC(Silicon Carbide) Wafer Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs. Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers |
Specification
Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
Stacking Sequence | ABCB | ABCACB |
Mohs Hardness | ≈9.2 | ≈9.2 |
Density | 3.21 g/cm3 | 3.21 g/cm3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
Dielectric Constant | c~9.66 | c~9.66 |
Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | |
Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
Band-gap | 3.23 eV | 3.02 eV |
Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
4H-N 4 inch diameter Silicon Carbide (SiC) Substrate Specification
2 inch diameter Silicon Carbide (SiC) Substrate Specification
Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade |
Diameter | 100. mm±0.2 mm or other customized size | |||
Thickness | 1000±25 um Or other customized thickness | |||
Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for
6H-N/6H-SI/4H-N/4H-SI | |||
Micropipe Density | ≤0 cm-2 | ≤2 cm-2 | ≤5 cm-2 | ≤30 cm-2 |
Resistivity 4H-N | 0.015~0.028 Ω•cm | |||
Resistivity 4/6H-SI | ≥1E7 Ω·cm | |||
Primary Flat | {10-10}±5.0° or round shape | |||
Primary Flat Length | 18.5 mm±2.0 mm or round shape | |||
Secondary Flat Length | 10.0mm±2.0 mm | |||
Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||
Edge exclusion | 1 mm | |||
TTV/Bow /Warp | ≤10μm /≤10μm /≤15μm | |||
Roughness | Polish Ra≤1 nm / CMP Ra≤0.5 nm | |||
Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |
Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | |
Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | |
Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |
edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |
Common Size
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
Application
Package
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
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