TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode

Brand Name:VISHAY
Certification:Original Factory Pack
Model Number:TSAL4400
Minimum Order Quantity:20
Delivery Time:1
Payment Terms:T/T, Western Union,Paypal
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Supplier`s last login times: within 25 hours
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Product Details

TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode


FEATURES

• Package type: leaded

• Package form: T-1

• Dimensions (in mm): ∅ 3

• Peak wavelength: λp = 940 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 25°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matches with detector TEFT4300

• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC


DESCRIPTION

TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.


APPLICATIONS

• Infrared remote control units

• Free air transmission systems

• Infrared source for optical counters and card readers


ORDERING INFORMATION
ORDERING CODEPACKAGINGREMARKSPACKAGE FORMtr (ns)
TSAL4400BulkMOQ: 5000 pcs, 5000 pcs/bulkT-1

Note

Test conditions see table “Basic Characteristics“

PRODUCT SUMMARY
COMPONENTIe (mW/sr)ϕ (deg)λP (nm)tr (ns)
TSAL440030± 25940800


China TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode supplier

TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode

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