Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

Certification:Original Factory Pack
Model Number:BSP315
Minimum Order Quantity:20pcs
Delivery Time:1 Day
Payment Terms:T/T , Western Union,PayPal
Place of Origin:China
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS


• P channel

• Enhancement mode

• Logic Level

• VGS(th) = -0.8...-2.0 V



Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )


Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T



Maximum Ratings

ParameterSymbolValuesUnit
Drain source voltageVDS-50V

Drain-gate voltage

RGS = 20 kΩ

VDGR-50
Gate source voltageVGS± 20

Continuous drain current

TA = 39 °C

ID-1.1A

DC drain current,

pulsed TA = 25 °C

IDpuls-4.4

Power dissipation

TA = 25 °C

Ptot1.8W

China Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS supplier

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

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