HEXFET Power Mosfet Transistor , power mosfet module IRF7329

Brand Name:IRF
Certification:Original Factory Pack
Model Number:IRF7329
Minimum Order Quantity:5pcs
Delivery Time:1 Day
Payment Terms:T/T, Western Union,PayPal
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
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HEXFET Power Mosfet Transistor , power mosfet module IRF7329


Trench Technology


Ultra Low On-Resistance


Dual P-Channel MOSFET

Low Profile (<1.8mm)


Available in Tape & Reel

Lead-Free


Description


New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique


ParameterMax.Units
VDSDrain- Source Voltage-12V
ID @ TA = 25°CContinuous Drain Current, VGS @ -4.5V-9.2A
ID @ TA= 70°CContinuous Drain Current, VGS @ -4.5V -7.4-7.4
IDMPulsed Drain Current-37
PD @TA = 25°CPower Dissipation2.0W
PD @TA = 70°CPower Dissipation1.3
Linear Derating Factor16mW/°C
VGSGate-to-Source Voltage± 8.0V
TJ, TSTGJunction and Storage Temperature Range-55 to + 150°C
China HEXFET Power Mosfet Transistor , power mosfet module IRF7329 supplier

HEXFET Power Mosfet Transistor , power mosfet module IRF7329

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