Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

Brand Name:Anterwell
Certification:new & original
Model Number:2N6038
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Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038


Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.


• High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc

• Collector–Emitter Sustaining Voltage — @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc

(Min) — 2N6036, 2N6039

• Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc

• Monolithic Construction with Built–In Base–Emitter Resistors to LimitELeakage Multiplication

• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package


MAXIMUM RATINGS

RatingSymbolValueUnit

Collector−Emitter Voltage 2N6034

2N6035, 2N6038

2N6036, 2N6039

VCEO

40

60

80

Vdc

Collector−Base Voltage 2N6034

2N6035, 2N6038

2N6036, 2N6039

VCBO

40

60

80

Vdc
Emitter−Base VoltageVEBO5.0Vdc

Collector Current Continuous

Peak

IC

4.0

8.0

Adc

Apk

Base CurrentIB100mAdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

40

320

W

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

1.5

12

W

mW/°C

Operating and Storage Junction Temperature RangeTJ, Tstg–65 to +150°C

THERMAL CHARACTERISTICS

CharacteristicSymbolMaxUnit
Thermal Resistance, Junction−to−CaseRJC3.12°C/W
Thermal Resistance, Junction−to−AmbientRJA83.3°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

CharacteristicSymbolMinMaxUnit
OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0) 2N6034 2N6035, 2N6038 2N6036, 2N6039

VCEO(sus)

40

60

80

--

--

--

Vdc

Collector−Cutoff Current

(VCE = 40 Vdc, IB = 0) 2N6034

(VCE = 60 Vdc, IB = 0) 2N6035, 2N6038

(VCE = 80 Vdc, IB = 0) 2N6036, 2N6039

ICEO

--

--

--

100

100

100

uA

Collector−Cutoff Current

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035, 2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036, 2N6039

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6035, 2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6036, 2N6039

ICEX

--

--

--

--

--

--

100

100

100

500

500

500

uA

Collector−Cutoff Current

(VCB = 40 Vdc, IE = 0) 2N6034

(VCB = 60 Vdc, IE = 0) 2N6035, 2N6038

(VCB = 80 Vdc, IE = 0) 2N6036, 2N6039

ICBO

--

--

--

0.5

0.5

0.5

mAdc
Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)IEBO--2.0mAdc
ON CHARACTERISTICS

DC Current Gain

(IC = 0.5 Adc, VCE = 3.0 Vdc)

(IC = 2.0 Adc, VCE = 3.0 Vdc)

(IC = 4.0 Adc, VCE = 3.0 Vdc)

hFE

500

750

100

--

15,000

--

--

Collector−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

(IC = 4.0 Adc, IB = 40 mAdc)

VCE(sat)

--

--

2.0

3.0

Vdc

Base−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 40 mAdc)

VBE(sat)--4.0Vdc

Base−Emitter On Voltage

(IC = 2.0 Adc, VCE = 3.0 Vdc)

VBE(on)--2.8Vdc
DYNAMIC CHARACTERISTICS

Small−Signal Current−Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

|hfe|25----

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034, 2N6035, 2N6036 2N6038, 2N6039

Cob

--

--

200

100

pF

*Indicates JEDEC Registered Data.




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Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

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