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TLP531,TLP532
Programmable Controllers AC / DC−Input Module Solid State Relay
The TOSHIBA TLP531 and TLP532 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
TLP532 is no−base internal connection for high−EMI environments.
Pin Configurations (top view)
Characteristic | Symbol | Rating | Unit | |
LED | Forward current | IF | 70 | mA |
Forward current derating (Ta ≥ 50°C) | ∆IF / °C | 0.93 | mA / °C | |
Peak forward current (100 µs pulse, 100pps) | IFP | 1 | A | |
Reverse voltage | VR | 5 | V | |
Junction temperature | Tj | 125 | °C | |
Detector | Collectoremitter voltage | VCEO | 55 | V |
Collectorbase voltage (TLP531) | VCBO | 80 | V | |
Emittercollector voltage | VECO | 7 | V | |
Emitterbase voltage (TLP531) | VEBO | 7 | V | |
Collector current | IC | 50 | mA | |
Power dissipation | PC | 150 | mW | |
Power dissipation derating (Ta ≥ 25°C) | ∆PC / °C | -1.5 | mW / °C | |
Junction temperature | Tj | 125 | °C | |
Storage temperature range | Tstg | 55~125 | °C | |
Operating temperature range | Topr | 55~100 | °C | |
Lead soldering temperature (10s) | Tsol | 260 | °C | |
Total package power dissipation | PT | 250 | mW | |
Total package power dissipation derating (Ta ≥ 25°C) | ∆PT / °C | -2.5 | mW / °C | |
Isolation voltage (AC, 1min., R.H.≤ 60%) | BVS | 2500 | Vrms |
Characteristic | Symbol | Min. | Typ. | Max. | Unit |
Supply voltage | VCC | -- | 5 | 24 | V |
Forward current | IF | -- | 16 | 25 | mA |
Collector current | IC | -- | 1 | 10 | mA |
Operating temperature | Topr | -25 | -- | 85 | °C |