MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

Brand Name:Anterwell
Certification:new & original
Model Number:MJD112T4G
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Supplier`s last login times: within 25 hours
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Product Details

MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors


MJD112 (NPN)

MJD117 (PNP)

Complementary Darlington Power Transistors


DPAK For Surface Mount Applications


SILICON POWER TRANSISTORS

2 AMPERES

100 VOLTS

20 WATTS


Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.


Features

• Pb−Free Packages are Available

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” and “RL” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series


MAXIMUM RATINGS

RatingSymbolMaxUnit
Collector−Emitter VoltageVCEO100Vdc
Collector−Base VoltageVCB100Vdc
Emitter−Base VoltageVEB5Vdc

Collector Current − Continuous

Peak

IC

2

4

Adc
Base CurrentIB50mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD

20

0.16

W

W/°C

Total Power Dissipation* @ TA = 25°C

Derate above 25°C

PD

1.75

0.014

W

W/°C

Operating and Storage Junction Temperature RangeTJ, Tstg−65 to +150°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.


MARKING DIAGRAMS


PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE O


DPAK−3

CASE 369D−01

ISSUE B


China MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors supplier

MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors

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