IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET

IRFD120

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly developmental type TA17401.

Features

• 1.3A, 100V

• r_DS(ON) = 0.300Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Absolute Maximum Ratings T_C = 25℃, Unless Otherwise Specified

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. T_J = 25℃ to 125℃.

3. V_DD = 25V, starting T_J = 25℃, L = 32mH, R_G = 25Ω, peak I_AS = 1.3A.

Packaging

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