M25PE80-VMN6TP electronic IC Chip 8 Mbit low voltage Page-Erasable Serial Flash memory

Brand Name:Anterwell
Certification:new & original
Model Number:M25PE80-VMN6TP
Minimum Order Quantity:20 pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
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Product Details

M25PE80

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout


Features

■ SPI bus compatible serial interface

■ 8-Mbit Page-Erasable Flash memory

■ Page size: 256 bytes

– Page Write in 11 ms (typical)

– Page Program in 0.8 ms (typical)

– Page Erase in 10 ms (typical)

■ SubSector Erase (4 Kbytes)

■ Sector Erase (64 Kbytes)

■ Bulk Erase (8 Mbits)


■ 2.7 V to 3.6 V single supply voltage

■ 50 MHz clock rate (maximum)

■ Deep Power-down mode 1 µA (typical)

■ Electronic Signature

– JEDEC standard two-byte signature (8014h)

■ Software Write Protection on a 64 Kbyte sector basis

■ Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits

■ More than 100 000 Write cycles

■ More than 20 year data retention

■ Packages – ECOPACK® (RoHS compliant)



Description

The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus.


The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.


The memory is organized as 16 sectors that are further divided up into 16 subsectors each (256 subsectors in total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1 048 576 bytes


The memory can be erased a page at a time, using the Page Erase instruction, a subsector at a time, using the SubSector Erase instruction, a sector at a time, using the Sector Erase instruction, or as a whole, using the Bulk Erase instruction.


The memory can be Write Protected by either Hardware or Software using a mix of volatile and non-volatile protection features, depending on the application needs. The protection granularity is of 64 Kbytes (sector granularity).


In order to meet environmental requirements, ST offers the M25PE80 in ECOPACK® packages. ECOPACK® packages are Lead-Free and RoHS compliant.


Absolute maximum ratings

SymbolParameterMinMaxUnit
TSTGStorage Temperature–65150°C
TLEADLead temperature during solderingSee (1)
VIOInput and Output Voltage (with respect to Ground)–0.6VCC + 0.6V
VCCSupply Voltage–0.64.0V
VESDElectrostatic Discharge Voltage (Human Body model)(2)–20002000V

1. Compliant with JEDEC Std J-STD-020C (for small body, SnPb or Pb assembly), the ST ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.

2. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).


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China M25PE80-VMN6TP electronic IC Chip 8 Mbit low voltage Page-Erasable Serial Flash memory supplier

M25PE80-VMN6TP electronic IC Chip 8 Mbit low voltage Page-Erasable Serial Flash memory

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