TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

Brand Name:TOSHIBA
Certification:Original Factory Pack
Model Number:TPC8111
Minimum Order Quantity:5pcs
Delivery Time:1 Day
Payment Terms:T/T, Western Union,PayPal
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
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TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications


• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 23 S (typ.)

• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)

• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)


Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution


Maximum Ratings (Ta = 25°C)

CharacteristicsSymbolRatingUnit
Drain-source voltageVDSS−30V
Drain-gate voltage (RGS = 20 kΩ)VDGR−30V
Gate-source voltageVGSS±20V
Drain power dissipation (t = 10 s)PD1.9W
Drain power dissipation (t = 10 s)PD1.0W
Single pulse avalanche energyEAS31.5mJ
Avalanche currentIAR−11A
Repetitive avalanche energyEAR0.19mJ
Channel temperatureTch150°C


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China TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET supplier

TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

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