FGH40N60SMD Mosfet Power Module st power mosfet IGBT Power Module

Brand Name:Anterwell
Certification:new & original
Model Number:FGH40N60SMD
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Supplier`s last login times: within 25 hours
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Product Details

FGH40N60SMDF

600V, 40A Field Stop IGBT


Features

• Maximum Junction Temperature : TJ =175℃

• Positive Temperaure Co-efficient for easy parallel operating

• High current capability

• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A

• High input impedance

• Fast switching

• Tighten Parameter Distribution

• RoHS compliant


Applications

• Solar Inverter, UPS, SMPS, PFC

• Induction Heating


General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential.


Absolute Maximum Ratings

SymbolDescriptionRatingsUnits
VCESCollector to Emitter Voltage600V
VGESGate to Emitter Voltage± 20V
ICCollector Current @ TC = 25℃80A
Collector Current @ TC = 100℃40A
ICM (1)Pulsed Collector Current120A
IFDiode Forward Current @ TC = 25℃40A
Diode Forward Current @ TC = 100℃20A
IFM (1)Pulsed Diode Maximum Forward Current120A
PDMaximum Power Dissipation @ TC = 25℃349W
Maximum Power Dissipation @ TC = 100℃174W
TJOperating Junction Temperature-55 to +175
TstgStorage Temperature Range-55 to +175
TL

Maximum Lead Temp. for soldering Purposes,

1/8” from case for 5 seconds

300

Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature.



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China FGH40N60SMD Mosfet Power Module st power mosfet IGBT Power Module supplier

FGH40N60SMD Mosfet Power Module st power mosfet IGBT Power Module

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