4H-N 5x5mm Sic Wafers DSP Ceramic Catalyst Substrate
Brand Name:zmkj
Model Number:high purity un-doped 4h-semi
Minimum Order Quantity:10PCS
Delivery Time:10-20days
Payment Terms:Western Union, T/T
Place of Origin:china
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Location:
Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
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within 13 hours
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Product Details
High purity HPSI 4H-SEMI 4H-N 10X10mm 5x5mm sic wafers DSP
Application of silicon carbide in power device industry
Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride GaN
Band gap eV 1.12 3.26 3.41
Breakdown electric field MV/cm 0.23 2.2 3.3
Electron mobility cm^2/Vs 1400 950 1500
Drift speed 10^7 cm/s 1 2.7 2.5
Thermal conductivity W/cmK 1.5 3.8 1.3
4H-N 5x5mm SiC (Silicon Carbide) wafers with double-side polished
(DSP) surfaces are highly sought after for their advanced
properties, particularly in high-power, high-frequency, and
high-temperature applications. As a semiconductor substrate, 4H-N
SiC stands out for its superior thermal conductivity, high
breakdown electric field, and wide bandgap, making it an ideal
candidate for power electronics and RF (radio frequency) devices.
These characteristics enable more efficient energy conversion in
electric vehicles, renewable energy systems, and advanced
communication technologies like 5G. Additionally, in ceramic
catalyst substrates, SiC’s high resistance to corrosion and
mechanical strength under extreme conditions offer an optimal
environment for chemical reactions, promoting energy-efficient
catalytic processes. For industries like automotive exhaust
systems, chemical processing, and environmental technology,
SiC-based catalyst substrates help in reducing emissions and
improving overall process efficiency. The combination of high
thermal stability, durability, and energy efficiency underscores
its pivotal role in both semiconductor advancements and catalytic
applications.
ZMSH offers SiC wafer and Epitaxy: SiC wafer is the third generation wide bandgap semiconductor material with excellent performance. It has the advantages of wide bandgap, high thermal conductivity, high breakdown electric field, high intrinsic temperature, radiation resistance, good chemical stability and high electron saturation drift rate. SiC wafer has also great application prospects in aerospace, rail transit, photovoltaic power generation, power transmission, new energy vehicles and other fields, and will bring revolutionary changes to power electronics technology. Si face or C face is CMP as epi-ready grade, packed by nitrogen gas, each wafer is in one wafer container, under 100 clean class room.
Epi-ready SiC wafers has N type or Semi-insulating, its polytype
are 4H or 6H in different quality grades, Micropipe Density (MPD):
Free, <5/cm2, <10/cm2, <30/cm2,<100/cm2, and the
available size is 2”,3”,4” and 6”.Regarding SiC Epitaxy, its Wafer
to wafer thickness uniformity: 2% , and Wafer to wafer doping
uniformity: 4%, available doping concentration are from undoped,
E15,E16,E18,E18/cm3, n type and p type epi layer are both
available, epi defects are below 20/cm2; All the substrate should
be used production grade for epi growth;N-type epi layers <20
microns are preceded by n-type, E18 cm-3, 0.5 μm buffer layer;
N-type epi layers≥20 microns are preceded by n-type, E18, 1-5 μm
buffer layer; N-type doping is determined as an average value
across the wafer (17 points) using Hg probe CV; Thickness is
determined as an average value across the wafer (9 points) using
FTIR.
2. substrates size of standard
4 inch diameter Silicon Carbide (SiC) Substrate Specification | |||||||||
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | |||||
| Diameter | 76.2 mm±0.3 mm or 100±0.5mm； | ||||||||
| Thickness | 500±25um | ||||||||
| Wafer Orientation | 0° off (0001)axis | ||||||||
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |||||
| Resistivity | 4H-N | 0.015~0.028 Ω•cm | |||||||
| 6H-N | 0.02~0.1 Ω•cm | ||||||||
| 4/6H-SI | ≥1E7 Ω·cm | ||||||||
| Primary Flat and length | {10-10}±5.0° ,32.5 mm±2.0 mm | ||||||||
| Secondary Flat Length | 18.0mm±2.0 mm | ||||||||
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||||||
| Edge exclusion | 3 mm | ||||||||
| TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm | ||||||||
| Roughness | Polish Ra≤1 nm ,CMP Ra≤0.5 nm | ||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | ||||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | ||||||
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | ||||||
Sic wafer ＆ ingots 2-6inch and other customized size also can be provided.
3.Products detail display
Delivery ＆ Package
FAQ
- Q1. Is your company a factory or trade company?
- We are the factory and we also can do export ourself.
- Q2.Is you company only work with sic business?
- yes; however we don‘t grow the sic crystal by self.
- Q3. Could you supply sample?
- Yes,we can supply sapphire sample according to customer's requirement
- Q4. Do you have any stock of sic wafers ?
- we usually keep some standard size sic wafers from 2-6inch wafers in stock
- Q5.Where is your company located.
- Our company located in shanghai ,China.
- Q6. How long will take to get the products.
- Generally it will take 3~4 weeks to process.It is depend on the and the size of the products.
4H-N 5x5mm Sic Wafers DSP Ceramic Catalyst Substrate
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