2Inch Silicon Carbide Wafers 6H Or 4H N-Type Or Semi-Insulating SiC Substrates
Brand Name:SICC
Certification:CE
Model Number:4h-n
Minimum Order Quantity:3PCS
Delivery Time:1-4weeks
Payment Terms:T/T, Western Union
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Location:
Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Supplier`s last login times:
within 13 hours
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Product Details
2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates
Advantages of Silicon Carbide
Hardness
There are numerous advantages to using silicon carbide over more traditional silicon substrates. One of the major advantages is its hardness. This gives the material many advantages, in high speed, high temperature and/or high voltage applications.
Silicon carbide wafers have high thermal conductivity, which means they can transfer heat from one point to another well. This improves its electrical conductivity and ultimately miniaturization, one of the common goals of switching to SiC wafers.
Thermal capabilities
High resistance to thermal shock. This means they have the ability to change temperatures rapidly without breaking or cracking. This creates a clear advantage when fabricating devices as it is another toughness characteristic that improves the lifetime and performance of silicon carbide in comparison to traditional bulk silicon.
Classification
Silicon carbide SiC substrates can be divided into two categories: semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon carbide substrates with high resistivity (resistorivity ≥107Ω·cm), and conductive silicon carbide substrates with low resistivity (the resistivity range is 15-30mΩ·cm).
Specification for 6inch 4H-N sic wafers .
(2inch,3inch 4inch ,8inch sic wafer also is available)
| Grade | Zero MPD Production Grade (Z Grade) | Standard Production Grade (P Grade) | Dummy Grade (D Grade) | |
| 99.5 mm~100.0 mm | ||||
| 4H-N | 350 μm±20 μm | 350 μm±25 μm | ||
| 4H-SI | 500 μm±20 μm | 500 μm±25 μm | ||
| Wafer Orientation | ||||
| Micropipe Density | 4H-N | ≤0.5cm-2 | ≤2 cm-2 | ≤15 cm-2 |
| 4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 | |
| ※ Resistivity | 4H-N | 0.015~0.025 Ω·cm | 0.015~0.028 Ω·cm | |
| 4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | ||
| Primary Flat Orientation | {10-10} ±5.0° | |||
| Primary Flat Length | 32.5 mm±2.0 mm | |||
| Secondary Flat Length | 18.0 mm±2.0 mm | |||
| Secondary Flat Orientation | Silicon face up: 90°CW. from Prime flat ±5.0° | |||
| Edge Exclusion | 3 mm | |||
| LTV/TTV/Bow /Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | ||
※ Roughness | Polish Ra≤1 nm | |||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | |||
Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm | ||
| Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | ||
| Polytype Areas By High Intensity Light | None | Cumulative area≤3% | ||
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% | ||
Silicon Surface Scratches By High Intensity Light | None | Cumulative len`gth≤1×wafer diameter | ||
| Edge Chips High By Intensity Light | None permitted ≥0.2 mm width and depth | 5 allowed, ≤1 mm each | ||
Silicon Surface Contamination By High Intensity | None | |||
| Multi-wafer Cassette or Single Wafer Container | ||||
Industrial chain
The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.
ZMSH company provides provides 100mm and 150mm SiC wafers. With its hardness (SiC is the second hardest material in the world) and stability under heat and high voltage current, this material is being widely used in several industries.
Price
ZMSH company offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications.
Epi-wafers can also be custom made upon request.
FAQ
Q: What's the wayof shipping and cost and pay term ?
A:(1) We accept 50％ T/T In advance and left 50% before delivery by DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 10pcs up.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape, size based on your needs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.
2Inch Silicon Carbide Wafers 6H Or 4H N-Type Or Semi-Insulating SiC Substrates
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