InP FP Epiwafer InP Substrate N/p Type 2 3 4 Inch With Thickeness Of 350-650um For Optical Net Work

InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work

InP epiwafer's Overview

Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies.

InP-based FP lasers are vital for fiber-optic communication, supporting short to medium-range data transmission in systems such as passive optical networks (PON) and wave-division multiplexing (WDM). Their emission wavelengths, typically around 1.3 μm and 1.55 μm, align with the low-loss windows of optical fibers, making them ideal for long-distance, high-speed transmission.

These wafers also find applications in high-speed data interconnects within data centers, where the cost-effective and stable performance of FP lasers is essential. Additionally, InP-based FP lasers are used in environmental monitoring and industrial gas sensing, where they can detect gases such as CO2 and CH4 due to their precise emission in infrared absorption bands.

In the medical field, InP epiwafers contribute to optical coherence tomography (OCT) systems, providing non-invasive imaging capabilities. Their integration in photonic circuits and potential use in aerospace and defense technologies, such as LIDAR and satellite communication, highlight their versatility.

Overall, InP epiwafers are critical in enabling a wide range of optical and electronic devices due to their excellent electrical and optical properties, particularly in the 1.3 μm to 1.55 μm wavelength range.

InP epiwafer's structure

InP epiwafer's PL Mapping test result

InP epiwafer's photos

InP epiwafer's feature & key data sheet

Indium Phosphide (InP) Epiwafers are distinguished by their excellent electrical and optical properties, making them essential for high-performance optoelectronic devices. Below is an overview of the key properties that define InP Epiwafers:

1. Crystal Structure and Lattice Constant

• Crystal Structure: InP has a zinc-blende crystal structure.
• Lattice Constant: 5.869 Å. The near-perfect lattice match with materials like InGaAs and InGaAsP allows for the growth of high-quality epitaxial layers, minimizing defects such as dislocations and strain.

2. Bandgap and Emission Wavelength

• Bandgap: InP has a direct bandgap of 1.344 eV at 300 K, corresponding to an emission wavelength of around 0.92 μm.
• Epiwafer Emission Range: Epitaxial layers grown on InP typically enable device operation in the 1.3 μm to 1.55 μm wavelength range, ideal for optical communication systems.

3. High Electron Mobility

• InP exhibits high electron mobility (5400 cm²/V·s), which results in fast electron transport, making it suitable for high-frequency and high-speed applications such as telecommunications and integrated photonic circuits.

4. Thermal Conductivity

• Thermal Conductivity: InP has a thermal conductivity of approximately 0.68 W/cm·K at room temperature. Although not as high as silicon, it is adequate for dissipating heat in many optoelectronic devices, especially with proper thermal management.

5. Optical Transparency

• InP is transparent to wavelengths above its bandgap, allowing for efficient photon emission and transmission in the infrared range, particularly in the critical telecom wavelengths (1.3 μm and 1.55 μm).

6. Doping and Conductivity

• n-type and p-type doping: InP can be doped with donors (e.g., sulfur) or acceptors (e.g., zinc), offering flexibility in creating n-type and p-type regions necessary for various semiconductor devices.
• High Conductivity: The heavily doped contact layers grown on InP substrates ensure low-resistance ohmic contacts, improving current injection efficiency in devices like FP lasers.

7. Low Defect Density

• InP Epiwafers exhibit low defect densities, crucial for high-performance devices. The high-quality epitaxial layers lead to improved device efficiency, longevity, and reliability.

In summary, the properties of InP Epiwafers, such as high electron mobility, low defect density, lattice matching, and effective operation in critical telecom wavelengths, make them indispensable in modern optoelectronics, particularly in high-speed communication and sensing applications.

InP epiwafer's application

Indium Phosphide (InP) Epiwafers are critical in several advanced technology fields due to their excellent optoelectronic properties. Here are the key applications:

1. Fiber Optic Communication

• Laser Diodes (FP/DFB Lasers): InP Epiwafers are used to fabricate Fabry-Perot (FP) and Distributed Feedback (DFB) lasers, which operate at 1.3 μm and 1.55 μm wavelengths. These wavelengths align with the low-loss transmission windows of optical fibers, making them ideal for long-distance data communication.
• Photodetectors: InP Epiwafers are also used to make photodetectors for receiving optical signals in fiber optic systems.

2. Data Center Interconnects

• InP-based lasers and detectors are employed in optical modules that enable high-speed, low-latency interconnects within data centers, improving overall network performance.

3. Optical Sensing and Gas Detection

• Gas Sensors: InP Epiwafers are used to fabricate lasers that operate in the infrared range, suitable for gas sensing applications (e.g., CO2, CH4) in industrial, environmental, and safety monitoring.
• Optical Coherence Tomography (OCT): InP-based light sources are crucial for medical imaging technologies like OCT, which are used for non-invasive diagnosis in healthcare.

4. Photonic Integrated Circuits (PICs)

• InP Epiwafers are foundational materials for photonic integrated circuits, which combine multiple photonic functions (e.g., lasers, modulators, and detectors) on a single chip for applications in high-speed communication, signal processing, and quantum computing.

5. LIDAR (Light Detection and Ranging)

• InP-based lasers are used in LIDAR systems for autonomous vehicles, aerial mapping, and various defense applications. These systems use the high-speed, reliable light sources generated from InP epiwafers for distance and speed measurements.

6. Satellite and Space Communication

• InP lasers and photodetectors play a crucial role in satellite communications and aerospace applications, enabling secure, high-speed data transmission over vast distances.

7. Defense and Aerospace

• InP Epiwafers are used in advanced defense systems such as high-speed radar, missile guidance, and secure communication systems, where reliable and high-frequency performance is critical.

These applications highlight the versatility and importance of InP Epiwafers in modern optoelectronic and photonic devices.

Q&A

What are InP epiwafers?

Indium Phosphide (InP) Epiwafers are semiconductor wafers composed of an InP substrate with one or more epitaxially grown layers of various materials (such as InGaAs, InGaAsP, or AlInAs). These layers are precisely deposited on the InP substrate to create specific device structures tailored for high-performance optoelectronic applications.