2inch / 4inch / 6inch Sic Silicon Carbide Substrate 4H-P Type Off Axis 2.0° Toward Production Grade
Brand Name:ZMSH
Certification:rohs
Model Number:SiC 4H-P
Payment Terms:T/T
Place of Origin:CHINA
Price:by case
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Product Description:
2inch/4inch/6inch Sic Silicon Carbide Substrate 4H-P Type Off axis: 2.0° toward Production Grade
Silicon carbide substrate 4H-P type refers to P-type
(Positive-type) silicon carbide material with 4H crystal structure.
Among them, "4H" describes a polycrystalline form of silicon
carbide, which has a hexagonal lattice structure and is a more
common one among various crystal forms of silicon carbide, and is
widely used in semiconductor device manufacturing because of its
excellent physical and chemical properties. The off-axis is 2.0°,
which refers to the deviation Angle of the cutting direction of the
substrate relative to the crystal spindle, which has a certain
influence on the electrical and mechanical properties of the
material.
Features:
- Excellent electrical properties: 4H-P type silicon carbide has a wide band gap (about 3.26 eV), high breakdown electric field strength, and low resistivity (by doping aluminum and other elements to obtain P-type conductivity), so that it can maintain stable electrical properties under extreme conditions such as high temperature, high pressure, high frequency.
- High thermal conductivity: The thermal conductivity of silicon carbide is much higher than that of silicon, about 4.9 W/m·K, which gives silicon carbide substrates a significant advantage in terms of heat dissipation and is suitable for high power density applications.
- High mechanical strength: Silicon carbide has high hardness, high toughness, can withstand large mechanical stress, suitable for harsh conditions of application.
- Good chemical stability: silicon carbide has good corrosion resistance to a variety of chemical substances, ensuring the long-term stability of the device in harsh environments.
Technical Parameter:
2 inch diameter Silicon Carbide (SiC) Substrate Specification
等级 Grade | 工业级 Production Grade (P Grade) | 研究级 Research Grade (R Grade) | 试片级 Dummy Grade (D Grade) | ||
| 直径 Diameter | 50.8mm±0.38mm | ||||
| 厚度 Thickness | 350 μm±25 μm | ||||
| 晶片方向 Wafer Orientation | Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N | ||||
| 微管密度 Micropipe Density | 0 cm-2 | ||||
| 电阻率 ※Resistivity | 4H/6H-P | ≤0.1 Ω.cm | |||
| 3C-N | ≤0.8 mΩ•cm | ||||
| 主定位边方向 Primary Flat Orientation | 4H/6H-P | {10-10} ±5.0° | |||
| 3C-N | {1-10} ±5.0° | ||||
| 主定位边长度 Primary Flat Length | 15.9 mm ±1.7 mm | ||||
| 次定位边长度 Secondary Flat Length | 8.0 mm ±1.7 mm | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 3 mm | |||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ||||
| 表面粗糙度※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | |||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | 1 allowed, ≤1 mm | |||
| 六方空洞(强光灯观测) ※ Hex Plates By High Intensity Light | Cumulative area≤1 % | Cumulative area≤3 % | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤2 % | Cumulative area≤5% | ||
Si 面划痕(强光灯观测)# Silicon Surface Scratches By High Intensity Light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 8 scratches to 1×wafer diameter cumulative length | ||
| 崩边(强光灯观测) Edge Chips High By Intensity Light light | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||
硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity | None | ||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
Applications:
- Electric vehicles: In the drive module and charging station of electric vehicles, the power device made of silicon carbide substrate can optimize the power conversion efficiency, improve the charging efficiency, and reduce energy consumption.
- Renewable energy: In photovoltaic inverters, wind power converters and other applications, silicon carbide substrate devices can improve energy conversion efficiency and reduce costs.
- 5G communication and satellite communication: silicon carbide substrate can be used to manufacture high-frequency microwave RF devices, such as HEMT, etc., suitable for 5G communication, satellite, radar and other high-frequency application scenarios.
- Industrial equipment: silicon carbide substrate devices are also suitable for equipment and instruments requiring high temperature conditions, such as industrial heating furnaces, heat treatment equipment, etc.
- Aerospace: In the aerospace field, the high temperature stability and high reliability of silicon carbide substrate devices make them ideal for power device materials.
Sample display:
FAQ:
1. Q:What is the effect of 2.0° off-axis on the performance of silicon carbide substrate?
A:Off-axis cutting can improve some electrical and mechanical properties of SIC substrate, such as increasing carrier mobility and optimizing surface topography, which is conducive to the manufacture and performance improvement of subsequent devices.
2. Q:How to choose the right silicon carbide substrate 4H-P off-axis to 2.0°?
A:ZMSH can select products that meet customer requirements based on the specific application scenario, taking into account factors such as substrate purity, defect density, crystal integrity and doping concentration.
Tag: #Sic wafer, #silicon carbide substrate, #4H-P type, #Off axis:
2.0°-4.0°toward, #Sic 4H-P type
2inch / 4inch / 6inch Sic Silicon Carbide Substrate 4H-P Type Off Axis 2.0° Toward Production Grade
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