WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:WSF3012
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Supplier`s last login times:
within 14 hours
Product Details
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Product Details
WSF3012 N-Ch and P-Channel MOSFET
Description
The WSF3012 is the highest performance trench N-ch
and P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge for
most of the synchronous buck converter applications .
The WSF3012 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full function
reliability approved.
Product Summery
Features
- z Advanced high cell density Trench technology
- z Super Low Gate Charge
- z Excellent CdV/dt effect decline
- z 100% EAS Guaranteed
- z Green Device Available
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter
Absolute Maximum Ratings
Thermal Data
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise
noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with
2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦
2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real
applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise
noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with
2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦
2%
3. The EAS data shows Max. rating . The test condition is
VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A
4. The power dissipation is limited by 150℃ junction temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real
applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
P-Channel Typical Characteristics
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
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