WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:WSF6012
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Supplier`s last login times:
within 14 hours
Product Details
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Product Details
QM4803D N-Ch and P-Channel MOSFET
Description
The WSF6012 is the highest performance
trench N-ch and P-ch MOSFET with extreme
high cell density , which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications .
The WSF6012 meet the RoHS and Green
Product requirement , 100% EAS
guaranteed with full function reliability
approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Applications
- z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
- z Networking DC-DC Power System
- z CCFL Back-light Inverter
Product Summery
Absolute Maximum Ratings
Thermal Data
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise
noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with
2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦
2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real
applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise
noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦
2%
3. The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real
applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
P-Channel Typical Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
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