2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:2SA1015
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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within 14 hours
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Product Details
SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP)
FEATURE
Ÿ Power dissipation
MARKING
A1015=Device code
Solid dot=Green molding compound device, if none,the normal device
Y=Rank of hFE, XXX=Code
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| 2SA1015 | TO-92 | Bulk | 10000 |
| 2SA1015-TA | TO-92 | Tape | 2000 |
MAXIMUM RATINGS (Ta=25Š unless otherwise noted)
| Symbol | Para meter | Value | Unit |
| VCBO | Collector-Base Voltage | -50 | V |
| VCEO | Collector-Emitter Voltage | -50 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current -Continuous | -150 | mA |
| PD | Collector Power Dissipation | 400 | mW |
| R0 JA | Thermal Resist ance from Junction to Ambient | 312 | Š / W |
| Tj | Junction Temperature | 150 | Š |
| Tstg | St orage Temperature | -55 ~+150 | Š |
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= -100µA, IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -0.1mA, IB=0 | -50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100µA, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB= -50V,IE=0 | -0.1 | µA | ||
| Collector cut-off current | ICEO | VCE= -50V, IB=0 | -0.1 | µA | ||
| Emitter cut-off current | IEBO | VEB= -5V, IC=0 | -0.1 | µA | ||
| DC current gain | hFE | VCE= -6V, IC= -2mA | 70 | 700 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC= -100mA, IB= -10mA | -0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC= -100mA, IB= -10mA | -1.1 | V | ||
| Transition frequency | fT | VCE= -10 V, IC= -1mA f =30MHz | 80 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 7 | pF | ||
| Noise figure | NF | VCE= -6 V, IC= -0.1mA, f =1kHz,RG=10kK | 6 | dB |
CLASSIFICATION OF hFE1
| Rank | O | Y | GR | BL |
| Range | 70-140 | 120-240 | 200-400 | 350-700 |
Typical Characteristics
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 3.300 | 3.700 | 0.130 | 0.146 |
| A1 | 1.100 | 1.400 | 0.043 | 0.055 |
| b | 0.380 | 0.550 | 0.015 | 0.022 |
| c | 0.360 | 0.510 | 0.014 | 0.020 |
| D | 4.300 | 4.700 | 0.169 | 0.185 |
| D1 | 3.430 | 0.135 | ||
| E | 4.300 | 4.700 | 0.169 | 0.185 |
| e | 1.270 TYP | 0.050 TYP | ||
| e1 | 2.440 | 2.640 | 0.096 | 0.104 |
| L | 14.100 | 14.500 | 0.555 | 0.571 |
| 0 | 1.600 | 0.063 | ||
| h | 0.000 | 0.380 | 0.000 | 0.015 |
SOT-89-3L Suggested Pad Layout
TO-92 Suggested Pad Layout
TO-92 7DSH DQG 5HHO
2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit
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