TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:B772M
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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Product Details
TO-251-3L Plastic-Encapsulate Transistors B772M TRANSISTOR (PNP)
FEATURES
Low Speed Switching
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -40 | V |
| VCEO | Collector-Emitter Voltage | -30 | V |
| VEBO | Emitter-Base Voltage | -6 | V |
| IC | Collector Current -Continuous | -3 | A |
| PC | Collector Power Dissipation | 1.25 | W |
| RӨJA | Thermal Resistance, junction to Ambient | 100 | ℃/W |
| Tj | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55-150 | ℃ |
ELECTRICAL CHARACTERISTICS
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100μA ,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -10mA , IB=0 | -30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100μA,IC=0 | -6 | V | ||
| Collector cut-off current | ICBO | VCB= -40V, IE=0 | -1 | μA | ||
| Collector cut-off current | ICEO | VCE=-30V, IB=0 | -10 | μA | ||
| Emitter cut-off current | IEBO | VEB=-6V, IC=0 | -1 | μA | ||
| DC current gain | hFE | VCE= -2V, IC= -1A | 60 | 400 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-2A, IB= -0.2A | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-2A, IB= -0.2A | -1.5 | V | ||
Transition frequency | fT | VCE= -5V, IC=-0.1A f =10MHz | 50 | 80 | MHz |
CLASSIFICATION OF hFE(2)
| Rank | R | O | Y | GR |
| Range | 60-120 | 100-200 | 160-320 | 200-400 |
Typical Characteristics
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.380 | 0.087 | 0.094 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| B | 0.800 | 1.400 | 0.031 | 0.055 |
| b | 0.710 | 0.810 | 0.028 | 0.032 |
| c | 0.460 | 0.560 | 0.018 | 0.022 |
| c1 | 0.460 | 0.560 | 0.018 | 0.022 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.130 | 5.460 | 0.202 | 0.215 |
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.286 TYP. | 0.090 TYP. | ||
| e1 | 4.327 | 4.727 | 0.170 | 0.186 |
| M | 1.778REF. | 0.070REF. | ||
| N | 0.762REF. | 0.018REF. | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.9REF. | 0.114REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| V | 4.830 REF. | 0.190 REF. | ||
| ĭ | 1.100 | 1.300 | 0.043 | 0.0±1 |
TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material
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