B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:B772
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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within 14 hours
Product Details
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Product Details
TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP)
FEATURE
Low Speed Switching
MARKING
B772=Device code
Solid dot = Green molding compound device, if none, the normal device XX=Code
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| B772 | TO-126 | Bulk | 200pcs/Bag |
| B772-TU | TO-126 | Tube | 60pcs/Tube |
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -40 | V |
| VCEO | Collector-Emitter Voltage | -30 | V |
| VEBO | Emitter-Base Voltage | -6 | V |
| IC | Collector Current -Continuous | -3 | A |
| PC | Collector Power Dissipation | 1.25 | W |
| RӨJA | Thermal Resistance from Junction to Ambient | 100 | ℃/W |
| Tj | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55-150 | ℃ |
ELECTRICAL CHARACTERISTICS
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100μA ,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -10mA , IB=0 | -30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100μA,IC=0 | -6 | V | ||
| Collector cut-off current | ICBO | VCB= -40V, IE=0 | -1 | μA | ||
| Collector cut-off current | ICEO | VCE=-30V, IB=0 | -10 | μA | ||
| Emitter cut-off current | IEBO | VEB=-6V, IC=0 | -1 | μA | ||
| DC current gain | hFE | VCE= -2V, IC= -1A | 60 | 400 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-2A, IB= -0.2A | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-2A, IB= -0.2A | -1.5 | V | ||
Transition frequency | fT | VCE= -5V, IC=-0.1A f =10MHz | 50 | 80 | MHz |
CLASSIFICATION OF hFE(2)
| Rank | R | O | Y | GR |
| Range | 60-120 | 100-200 | 160-320 | 200-400 |
Typical Characteristics
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 3.300 | 3.700 | 0.130 | 0.146 |
| A1 | 1.100 | 1.400 | 0.043 | 0.055 |
| b | 0.380 | 0.550 | 0.015 | 0.022 |
| c | 0.360 | 0.510 | 0.014 | 0.020 |
| D | 4.300 | 4.700 | 0.169 | 0.185 |
| D1 | 3.430 | 0.135 | ||
| E | 4.300 | 4.700 | 0.169 | 0.185 |
| e | 1.270 TYP | 0.050 TYP | ||
| e1 | 2.440 | 2.640 | 0.096 | 0.104 |
| L | 14.100 | 14.500 | 0.555 | 0.571 |
| 0 | 1.600 | 0.063 | ||
| h | 0.000 | 0.380 | 0.000 | 0.015 |
B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit
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