B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:B772
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Supplier`s last login times:
within 14 hours
Product Details
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Product Details
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN)
FEATURE
Low speed switching
Marking :B772
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -40 | V |
| VCEO | Collector-Emitter Voltage | -30 | V |
| VEBO | Emitter-Base Voltage | -6 | V |
| IC | Collector Current -Continuous | -3 | A |
| PC | Collector Power Dissipation | 0.5 | W |
| RӨJA | Thermal Resistance, Junction to Ambient | 250 | ℃/W |
| Tj | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100μA ,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -10mA , IB=0 | -30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100μA,IC=0 | -6 | V | ||
| Collector cut-off current | ICBO | VCB= -40V, IE=0 | -1 | μA | ||
| Collector cut-off current | ICEO | VCE=-30V, IB=0 | -10 | μA | ||
| Emitter cut-off current | IEBO | VEB=-6V, IC=0 | -1 | μA | ||
| DC current gain | hFE | VCE= -2V, IC= -1A | 60 | 400 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-2A, IB= -0.2A | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-2A, IB= -0.2A | -1.5 | V | ||
Transition frequency | fT | VCE= -5V, IC=-0.1A f =10MHz | 50 | MHz |
Typical Characteristics
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 1.400 | 1.600 | 0.055 | 0.063 |
| b | 0.320 | 0.520 | 0.013 | 0.020 |
| b1 | 0.400 | 0.580 | 0.016 | 0.023 |
| c | 0.350 | 0.440 | 0.014 | 0.017 |
| D | 4.400 | 4.600 | 0.173 | 0.181 |
| D1 | 1.550 REF. | 0.061 REF. | ||
| E | 2.300 | 2.600 | 0.091 | 0.102 |
| E1 | 3.940 | 4.250 | 0.155 | 0.167 |
| e | 1.500 TYP. | 0.060 TYP. | ||
| e1 | 3.000 TYP. | 0.118 TYP. | ||
| L | 0.900 | 1.200 | 0.035 | 0.047 |
CLASSIFICATION OF hFE
| Rank | R | O | Y | GR |
| Range | 60-120 | 100-200 | 160-320 | 200-400 |
Typical Characteristics
B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V
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