Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:6N60
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Shenzhen Guangdong China
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Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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Product Details
6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
FEATURES
RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
ORDERING INFORMATION
| Ordering Number | Package | Pin Assignment | Packing | |||
| Lead Free | Halogen Free | 1 | 2 | 3 | ||
| 6N60ZL-TF3-T | 6N60ZG-TF3-T | TO-220F | G | D | S | Tube |
Note: Pin Assignment: G: Gate D: Drain S: Source
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
| PARAMETER | SYMBOL | RATINGS | UNIT | |
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Avalanche Current (Note 2) | IAR | 6.2 | A | |
| Continuous Drain Current | ID | 6.2 | A | |
| Pulsed Drain Current (Note 2) | IDM | 24.8 | A | |
| Avalanche Energy | Single Pulsed (Note 3) | EAS | 252 | mJ |
| Repetitive (Note 2) | EAR | 13 | mJ | |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | ns | |
| Power Dissipation | PD | 40 | W | |
| Junction Temperature | TJ | +150 | °C | |
| Operating Temperature | TOPR | -55 ~ +150 | °C | |
| Storage Temperature | TSTG | -55 ~ +150 | °C | |
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
4. Repetitive Rating: Pulse width limited by maximum junction temperature.
5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
THERMAL DATA
| PARAMETER | SYMBOL | RATING | UNIT |
| Junction to Ambient | θJA | 62.5 | °C/W |
| Junction to Case | θJC | 3.2 | °C/W |
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
| OFF CHARACTERISTICS | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250μA | 600 | V | |||
Drain-Source Leakage Current | IDSS | VDS = 600V, VGS = 0V | 10 | μA | |||
| VDS = 480V, VGS = 0V, TJ=125°C | 100 | μA | |||||
| Gate- Source Leakage Current | Forward | IGSS | VGS = 20V, VDS = 0V | 10 | μA | ||
| Reverse | VGS = -20V, VDS = 0V | -10 | μA | ||||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | ID=250μA, Referenced to 25°C | 0.53 | V/°C | |||
| ON CHARACTERISTICS | |||||||
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 250μA | 2.0 | 4.0 | V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 3.1A | 1.4 | 1.75 | Ω | ||
| DYNAMIC CHARACTERISTICS | |||||||
| Input Capacitance | CISS | VDS=25V, VGS=0V, f=1.0 MHz | 770 | 1000 | pF | ||
| Output Capacitance | COSS | 95 | 120 | pF | |||
| Reverse Transfer Capacitance | CRSS | 10 | 13 | pF | |||
| SWITCHING CHARACTERISTICS | |||||||
| Turn-On Delay Time | tD(ON) | VGS=0~10V, VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) | 45 | 60 | ns | ||
| Turn-On Rise Time | tR | 95 | 110 | ns | |||
| Turn-Off Delay Time | tD(OFF) | 185 | 200 | ns | |||
| Turn-Off Fall Time | tF | 110 | 125 | ns | |||
| Total Gate Charge | QG | VGS=10V, VDD=50V, ID=1.3A IG=100μA (Note 1, 2) | 32.8 | nC | |||
| Gate-Source Charge | QGS | 7.0 | nC | ||||
| Gate-Drain Charge | QGD | 9.8 | nC | ||||
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | |||||||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0 V, IS = 6.2 A | 1.4 | V | |||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 6.2 | A | ||||
Maximum Pulsed Drain-Source Diode Forward Current | ISM | 24.8 | A | ||||
| Reverse Recovery Time | trr | VGS = 0 V, IS = 6.2 A, dIF/dt = 100 A/μs (Note 1) | 290 | ns | |||
| Reverse Recovery Charge | QRR | 2.35 | μC | ||||
Essentially independent of operating temperature.Notes: 1. Pulse
Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking
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