Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:AP3N10BI
Minimum Order Quantity:Negotiation
Delivery Time:1 - 2 Weeks
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V


N Channel Mosfet Power Working and Characteristics


The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the heavily doped layer with a low resistive material and the N- layer is a lightly doped layer with the high resistance region.


N Channel Mosfet Power Features



VDS= 100V I D=2.8 A



RDS(ON)< 320mΩ @ VGS=10V


N Channel Mosfet Power Application


Battery protection

Uninterruptible power supply


Package Marking and Ordering Information


Product IDPackMarkingQty(PCS)
AP3N10BISOT23MA43000

Absolute Maximum Ratings (TC=25 unless otherwise specified)


SymbolParameterRatingUnits
VDSDrain-Source Voltage100V
VGSGate-Sou rce Voltage±20V
ID@TA=25℃Continuous Drain Current, V GS @ 10V 12.8A
ID@TA=70℃Continuous Drain Current, V GS @ 10V 11A
IDMPulsed Drain Current25A
PD@TA=25 ℃Total Power Dissipation31W
TSTGStorage Temperature Range-55 to 150
TJOperating Junction Temperature Range-55 to 150
RθJAThermal Resistance Junction-ambient 1125℃/W
RθJCThermal Resistance Junction-Case 180℃/W

Electrical Characteristics (TJ=25 , unless otherwise noted)


SymbolParameterConditionsMin.Typ.Max.Unit
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
△ BVDSS/△TJBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.067---V/℃
RDS(ON)Static Drain-Source On-ResistanceVGS=10V , I D=1A---260310

VGS=4.5V , I D=0.5A---270320
VGS(th)Gate Threshold VoltageVGS=VDS , I =250uA1.01.52.5V
△VGS(th)VGS(th) Temperature Coefficient----4.2---mV/℃
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------1uA
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------5uA
IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V------±100nA
gfsForward TransconductanceVDS=5V , ID=1A---2.4---S
RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---2.85.6
QgTotal Gate Charge (10V)---9.713.6
QgsGate-Source Charge---1.62.2
QgdGate-Drain Charge---1.72.4
Td(on)Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

---1.63.2

ns

Tr
Td(off)Turn-Off Delay Time---13.627
TfFall Time---1938
CissInput Capacitance---508711
CossOutput Capacitance---2941
CrssReverse Transfer Capacitance---16.423
ISContinuous Source Current 1,4VG=VD=0V , Force Current------1.2A
ISMPulsed Source Current 2,4------5A
VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25℃------1.2V
trrReverse Recovery TimeIF=1A , dI/dt=100A/µs ,---14---nS
QrrReverse Recovery Charge---9.3---nC
SymbolParameterConditionsMin.Typ.Max.Unit
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
△ BVDSS/△TJBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.067---V/℃
RDS(ON)Static Drain-Source On-ResistanceVGS=10V , I D=1A---260310

VGS=4.5V , I D=0.5A---270320
VGS(th)Gate Threshold VoltageVGS=VDS , I =250uA1.01.52.5V
△VGS(th)VGS(th) Temperature Coefficient----4.2---mV/℃
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------1uA
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------5uA
IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V------±100nA
gfsForward TransconductanceVDS=5V , ID=1A---2.4---S
RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---2.85.6
QgTotal Gate Charge (10V)---9.713.6
QgsGate-Source Charge---1.62.2
QgdGate-Drain Charge---1.72.4
Td(on)Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3.3

ID=1A

---1.63.2

ns

Tr
Td(off)Turn-Off Delay Time---13.627
TfFall Time---1938
CissInput Capacitance---508711
CossOutput Capacitance---2941
CrssReverse Transfer Capacitance---16.423
ISContinuous Source Current 1,4VG=VD=0V , Force Current------1.2A
ISMPulsed Source Current 2,4------5A
VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25℃------1.2V
trrReverse Recovery TimeIF=1A , dI/dt=100A/µs ,---14---nS
QrrReverse Recovery Charge---9.3---nC

Note :

1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%

3.The power dissipation is limited by 150 ℃ junction temperature


4 .The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation.



Symbol

Dimensions in Millimeters
MIN.MAX.
A0.9001.150
A10.0000.100
A20.9001.050
b0.3000.500
c0.0800.150
D2.8003.000
E1.2001.400
E12.2502.550
e0.950TYP
e11.8002.000
L0.550REF
L10.3000.500
θ

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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

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