AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:AP6H03S
Minimum Order Quantity:Negotiation
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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within 14 hours
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Product Details
AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor
Mosfet Driver Using Transistor Description:
The AP6H03Suses advanced trench
technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a
level shifted high side switch, and for a host of other
applications
Mosfet Driver Using Transistor Features
N-Channel
VDS = 30V,ID =7.5A
RDS(ON) < 16mΩ@ VGS=10V
NChannel
VDS = 30V,ID =7.5A
RDS(ON) < 16mΩ@ VGS=10V
High power and current handing capability
Lead free product is acquired
Surface mount package
Mosfet Driver Using Transistor Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP6H03S | SOP-8 | AP6H03S YYWWWW | 3000 |
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Sou rce Voltage | ±20 | V |
D I | Drain Current – Continuous (TC=25℃) | 7.5 | A |
| Drain Current – Continuous (TC=100℃) | 4.8 | A | |
| IDM | Drain Current – Pulsed1 | 30 | A |
| EAS | Single Pulse Avalanche Energy 2 | 14 | mJ |
| IAS | Single Pulse Avalanched Current 2 | 17 | A |
PD | Power Dissipation (TC=25℃) | 2.1 | W |
| Power Dissipation – Derate above 25℃ | 0.017 | W/℃ | |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Sou rce Voltage | ±20 | V |
D I | Drain Current – Continuous (TC=25℃) | 7.5 | A |
| Drain Current – Continuous (TC=100℃) | 4.8 | A | |
| IDM | Drain Current – Pulsed1 | 30 | A |
| EAS | Single Pulse Avalanche Energy 2 | 14 | mJ |
| IAS | Single Pulse Avalanched Current 2 | 17 | A |
PD | Power Dissipation (TC=25℃) | 2.1 | W |
| Power Dissipation – Derate above 25℃ | 0.017 | W/℃ | |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Characteristics
| Symbol | Parameter | Typ. | Max. | Unit |
| RθJA | Thermal Resistance Junction to ambient | --- | 60 | ℃/W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| △ BVDSS/△ TJ | BVDSS Temperature Coefficient | Reference to 25℃•, ID=1mA | --- | 0.04 | --- | V/℃ |
IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=125℃ | --- | --- | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=± 20V , VDS=0V | --- | --- | ± 100 | nA |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| △ BVDSS/△ TJ | BVDSS Temperature Coefficient | Reference to 25℃•, ID=1mA | --- | 0.04 | --- | V/℃ |
IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=125℃ | --- | --- | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=± 20V , VDS=0V | --- | --- | ± 100 | nA |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=6A | --- | 15 | 20 | mΩ |
| VGS=4.5V , ID=3A | --- | 23 | 30 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , I =250uA | 1.2 | 1.5 | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -4 | --- | mV/℃ | |
| gfs | Forward Transconductance | VDS=10V , I D=6A | --- | 13 | --- | S |
| Qg | Total Gate Charge3 , 4 | --- | 4.1 | 8 | ||
| Qgs | Gate-Source Charge 3 , 4 | --- | 1 | 2 | ||
| Qgd | Gate-Drain Charge | --- | 2.1 | 4 | ||
| Td(on) | Turn-On Delay Time 3 , 4 | --- | 2.6 | 5 | ||
| Tr | Rise Time | --- | 7.2 | 14 | ||
| Td(off) | Turn-Off Delay Time 3 , 4 | --- | 15.8 | 30 | ||
| Tf | Fall Time 3 , 4 | --- | 4.6 | 9 | ||
| Ciss | Input Capacitance | --- | 345 | 500 | ||
| Coss | Output Capacitance | --- | 55 | 80 | ||
| Crss | Reverse Transfer Capacitance | --- | 32 | 55 | ||
| Rg | Gate resistance | VGS=0V, VDS=0V, f=1MHz | --- | 3.2 | 6.4 | Ω |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 7.5 | A |
| ISM | Pulsed Source Current | --- | --- | 30 | A | |
| VSD | Diode Forward Voltage3 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |
rr t | Reverse Recovery Time | VGS=0V,IS=1A , di/dt=100A/µs | --- | --- | --- | ns |
| Qrr | Reverse Recovery Charge | --- | --- | --- | nC |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 7.5 | A |
| ISM | Pulsed Source Current | --- | --- | 30 | A | |
| VSD | Diode Forward Voltage3 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |
rr t | Reverse Recovery Time | VGS=0V,IS=1A , di/dt=100A/µs | --- | --- | --- | ns |
| Qrr | Reverse Recovery Charge | --- | --- | --- | nC |
Reflow Soldering
The choice of heating method may be influenced by plastic QFP package). If infrared or vapor phase heating is used and the package is not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture in them can cause cracking of the plastic body. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface
temperature of the packages should preferable be kept below 245 °C for thick/large packages (packages with a thickness
2.5 mm or with a volume 350 mm so called thick/large packages). The top-surface temperature of the packages should preferable be kept below 260 °C for thin/small packages (packages with a thickness < 2.5 mm and a volume < 350 mm so called thin/small packages).
| 1’st Ram Up Rate | max3.0+/-2 /sec | - |
| Preheat | 150 ~200 | 60~180 sec |
| 2’nd Ram Up | max3.0+/-2 /sec | - |
| Solder Joint | 217 above | 60~150 sec |
| Peak Temp | 260 +0/-5 | 20~40 sec |
| Ram Down rate | 6 /sec max | - |
Wave Soldering:
Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.
Manual Soldering:
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor
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