6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection

Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:AP9926A
Minimum Order Quantity:Negotiation
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location: Shenzhen Guangdong China
Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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Product Details

6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection


General Description:


The AP9926A uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.


General Features


VDS = 20V ID = 6A
RDS(ON) < 25mΩ @ VGS=4.5V


Application


Battery protection
Load switch
Uninterruptible power supply


Package Marking and Ordering Information


Product IDPackMarkingQty(PCS)
AP9926ASOP-8AP9926A XXX YYYY3000

Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)


SymbolParameterRatingUnits
V DSDrain-Source Voltage20V
V GSGate-Source Voltage+12V
ID@TA=25 ℃Drain Current, V GS @ 4.5V 36A
ID@TA=70 ℃Drain Current, V GS @ 4.5V 34.8A
IDMPulsed Drain Current126A
P D@TA=25℃Total Power Dissipation2W
Linear Derating Factor0.016W/ ℃
TSTGStorage Temperature Range-55 to 150
TJOperating Junction Temperature Range-55 to 150
Rthj-a

Maximum Thermal Resistance, Junction-

ambient

62.5℃/W

Electrical Characteristics@Tj =25 C(unless otherwise specified)



Symbol


Parameter


Test Conditions


Min.


Typ.


Max.


Units

BV DSSDrain-Source Breakdown VoltageVGS=0V, I D=250uA20--V
RDS(ON)

Static Drain-Source On-

Resistance

VGS=4.5V, I D=6A-2125
VGS=2.5V, I D=4A-3245
V GS(th)Gate Threshold VoltageVDS=VGS, ID=250uA--1.2V
g fsForward TransconductanceVDS=10V, I D=6A-6-S
IDSSDrain-Source Leakage CurrentVDS=20V, V GS =0V--25uA

Drain-Source Leakage Current

(Tj=70 C)

VDS=20V ,V GS=0V--250uA
IGSSGate-Source LeakageVGS=+12V, V DS=0V--+100nA
QgTotal Gate ChargeID=6A-1117.6nC
QgsGate-Source Charge-1.1-nC
QgdGate-Drain ("Miller") Charge-4.1-nC
td(on)Turn-on Delay TimeVDS=10V-4.2-ns
trRise Time-9-ns
td(off)Turn-off Delay Time-23-ns

f

t

Fall Time-3.5-ns
CissInput Capacitance-570910pF
CossOutput Capacitance-90-pF
CrssReverse Transfer Capacitance-85-pF
RgGate Resistancef=1.0MHz-1.62.4Ω
V SDForward On VoltageIS=1.7A, V GS=0V--1.2V
trrReverse Recovery Time

IS=6A, V GS=0V,

dI/dt=100A/µs

-21-ns
QrrReverse Recovery Charge-14-nC

Symbol


Parameter


Test Conditions


Min.


Typ.


Max.


Units

BV DSSDrain-Source Breakdown VoltageVGS=0V, I D=250uA20--V
RDS(ON)

Static Drain-Source On-

Resistance

VGS=4.5V, I D=6A-2125
VGS=2.5V, I D=4A-3245
V GS(th)Gate Threshold VoltageVDS=VGS, ID=250uA--1.2V
g fsForward TransconductanceVDS=10V, I D=6A-6-S
IDSSDrain-Source Leakage CurrentVDS=20V, V GS =0V--25uA

Drain-Source Leakage Current

(Tj=70 C)

VDS=20V ,V GS=0V--250uA
IGSSGate-Source LeakageVGS=+12V, V DS=0V--+100nA
QgTotal Gate ChargeID=6A-1117.6nC
QgsGate-Source Charge-1.1-nC
QgdGate-Drain ("Miller") Charge-4.1-nC
td(on)Turn-on Delay TimeVDS=10V-4.2-ns
trRise Time-9-ns
td(off)Turn-off Delay Time-23-ns

f

t

Fall Time-3.5-ns
CissInput Capacitance-570910pF
CossOutput Capacitance-90-pF
CrssReverse Transfer Capacitance-85-pF
RgGate Resistancef=1.0MHz-1.62.4Ω
V SDForward On VoltageIS=1.7A, V GS=0V--1.2V
trrReverse Recovery Time

IS=6A, V GS=0V,

dI/dt=100A/µs

-21-ns
QrrReverse Recovery Charge-14-nC

Attention


1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection

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