AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:AP1334GEU-HF
Minimum Order Quantity:Negotiable
Delivery Time:4~5 week
Payment Terms:T/T, Western Union, L/C
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Shenzhen Guangdong China
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Product Details
Electronic component AP1334GEU-HF advantage price for original stock
Description
AP1334 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on- resistance
and fast switching performance. It provides the designer with an
extreme efficient device for use in a wide range of power
applications.
Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Drain Current3, VGS @ 4.5V | 2.1 | A |
| ID@TA=70℃ | Drain Current3, VGS @ 4.5V | 1.7 | A |
| IDM | Pulsed Drain Current1 | 8 | A |
| PD@TA=25℃ | Total Power Dissipation | 0.35 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Data
| Symbol | Parameter | Value | Unit |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 360 | ℃/W |
AP1334GEU-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=2A | - | - | 65 | mΩ |
| VGS=2.5V, ID=1.5A | - | - | 75 | mΩ | ||
| VGS=1.8V, ID=1A | - | - | 85 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 0.3 | - | 1 | V |
| gfs | Forward Transconductance | VDS=5V, ID=2A | - | 12 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=16V, VGS=0V | - | - | 10 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +30 | uA |
| Qg | Total Gate Charge | ID=2A VDS=10V VGS=4.5V | - | 9 | 14.4 | nC |
| Qgs | Gate-Source Charge | - | 1 | - | nC | |
| Qgd | Gate-Drain ("Miller") Charge | - | 2.5 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=10V ID=1A RG=3.3Ω VGS=5V | - | 6 | - | ns |
| tr | Rise Time | - | 7 | - | ns | |
| td(off) | Turn-off Delay Time | - | 18 | - | ns | |
| tf | Fall Time | - | 3 | - | ns | |
| Ciss | Input Capacitance | VG.S=0V VDS=10V f=1.0MHz | - | 570 | 912 | pF |
| Coss | Output Capacitance | - | 70 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 60 | - | pF | |
| Rg | Gate Resistance | f=1.0MHz | - | 2.4 | 4.8 | Ω |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=1.2A, VGS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time | IS=2A, VGS=0V, dI/dt=100A/µs | - | 14 | - | ns |
| Qrr | Reverse Recovery Charge | - | 7 | - | nC |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on FR4 board, t ≦ 10 sec.
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AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition
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