2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test
Brand Name:ZMKJ
Model Number:2inch*0.625mmt
Minimum Order Quantity:10pcs
Delivery Time:2-4weeks
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:CHINA
Contact Now
Add to Cart
Verified Supplier
Location:
Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Supplier`s last login times:
within 38 hours
Product Details
Company Profile
Product Details
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity
4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic)
substrates wafersS/ Customzied as-cut sic wafers
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
1. Description
SILICON CARBIDE MATERIAL PROPERTIES
Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
Stacking Sequence | ABCB | ABCACB |
Mohs Hardness | ≈9.2 | ≈9.2 |
Density | 3.21 g/cm3 | 3.21 g/cm3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
Dielectric Constant | c~9.66 | c~9.66 |
Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | |
Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
Band-gap | 3.23 eV | 3.02 eV |
Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
2 inch diameter Silicon Carbide (SiC) Substrate Specification
Grade | Production Grade | Research Grade | Dummy Grade | |
Diameter | 50.8 mm±0.38 mm | |||
Thickness | 330 μm±25μm or customzied | |||
Wafer Orientation | On axis : <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI Off axis : 4.0° toward 1120 ±0.5° for 4H-N/4H-SI | |||
Micropipe Density | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |
Resistivity | 4H-N | 0.015~0.028 Ω·cm | ||
6H-N | 0.02~0.1 Ω·cm | |||
4/6H-SI | >1E5 Ω·cm | (90%) >1E5 Ω·cm | ||
Primary Flat | {10-10}±5.0° | |||
Primary Flat Length | 15.9 mm±1.7 mm | |||
Secondary Flat Length | 8.0 mm±1.7 mm | |||
Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||
Edge exclusion | 1 mm | |||
TTV/Bow /Warp | ≤15μm /≤25μm /≤25μm | |||
Roughness | Polish Ra≤1 nm | |||
CMP Ra≤0.5 nm | ||||
| None | None | 1 allowed, ≤1 mm | |
Hex Plates by high intensity light | Cumulative area≤1 % | Cumulative area≤1 % | Cumulative area≤3 % | |
| None | Cumulative area≤2 % | Cumulative area≤5% | |
| 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 8 scratches to 1×wafer diameter cumulative length | |
Edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |
CATALOGUE COMMON SIZE
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots |
2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
About ZMKJ Company
ZMKJ can provides high quality single crystal SiC wafer ( Silicon
Carbide ) to electronic and optoelectronic industry . SiC wafer is
a next generation semiconductor material , with unique electrical
properties and excellent thermal properties , compared to silicon
wafer and GaAs wafer , SiC wafer is more suitable for high
temperature and high power device application . SiC wafer can be
supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type ,
Nitrogen doped , and semi-insulating type available . Please
contact us for more product information .
Our Relation Products
Sapphire wafer＆ lens/ LiTaO3 Crystal/ SiC wafers/ LaAlO3 /
SrTiO3/wafers/ Ruby Ball/ Gap wafers
FAQ:
Q: What's the way of shipping and cost and pay term ?
A:(1) We accept 100％ T/T In advance by DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 2pcs.
(2) For customized products, the MOQ is 10pcs up.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape, size based on your needs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.
2Inch 4inch Silicon Carbide Wafer 6H-N/ 4H-N Dummy SiC Crystal Wafers For Device Test
Inquiry Cart
0