Polishing Cylindrical Hollow Silicon Carbide Wafer Ceramic Optical Element SiC

Brand Name:ZMKJ
Model Number:un-doped dia2x10mmt
Minimum Order Quantity:10pcs
Delivery Time:2-3weeks
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:CHINA
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Verified Supplier
Location: Shanghai Shanghai China
Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Supplier`s last login times: within 38 hours
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Product Details

Doped 4h-Semi high purity customized size Sic ceramic crystal rod Lens diameter2mm 10mm length High Precision 1mm 2mm 3mm 4mm 5mm 6mm 24mm Etc Silicon Carbide Ceramic Ball For Bearing Sic Beads Industrial Customized Black SiC Silicon carbide Ceramic Plates

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Product Name
SSIC RBSIC SIC ceramic seal ring silicon carbide plate High pure silicon carbide
Material
Silicon Carbide
Color
Black
Grade
RB/S SIC/RB+C/S SIC+C
Payment
T/T,Western Union,Online payment by credit card are avilable
Application
It is widely used in pumps , mechanical seal
Thransport
Air transport: 5-10 days; Ocean shipping: About one month.
Delivery Time
1.Stock:delivery within 3-5 days after receiving your payment.
2. OEM/ODM:The normal Lead time is 15-45 days, which depends on your quantiy.

Silicon Carbide Ceramic:
Is an ideal choice for high temperature engineering materials. Due to the outstanding properties, Silicon Carbide Ceramic is also recognized as a mechanical sealing material better than metals, tungsten carbide, al2o3 ceramics etc. Moreover, it also has advantages of self-lubricating properties and low friction coefficient.We are specialized in pressureless sintering silicon carbide(SSIC) mechanical part, the material is alpha sintered silicon carbide.

6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications

PropertyUfUhni) Grade | P (Produeben) GradeR (Research) GradeD (DummyGrade
Diameter150.0 mmHJ.25 mm
Surface Oncniation{0001} ±0.2.
Primary Flat Orientalicn<ll-20>±5.0#
Secondary Hat OrientaUenN>A
Primary Flat Length47.5 mm ±1.5 mm
Secondary flat LengthNone
Wa EdgeChamfer
Micropipc Density<1 knr <5 /cm2<10/cm2<50/cm2
Poljlypc area by High-imcnsity LightNone< 10%
Resist! vit),>lE7Hcm(area 75%) >lE7D cm
Thickness350.0 pm ± 25.0 jim or 500.0 ± 25.C pm
TTVS 10 pm
Bou<Absolute Value)=40 pm
Warp-60 pm
Surface FinishC-focc: Optical polished, Si-focc: CMP
Roughncss(lC UmXIOu m)CMP Si-bee Ra<C,5 nmN/A
Crack by High-intcnsity* LightNone
Edge Chips/lndcnts by Diffuse LightingNoneQly<2, tbc length and width of each V 1 mm
Effective Area>90%>8C%N/A

Silicon Details:

About ZMKJ Company


ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .


  1. FAQ:
  2. Q: What's the way of shipping and cost?
  3. A:(1) We accept DHL, Fedex, EMS etc.
  4. (2) it is fine If you have your own express account ,If not,we could help you ship them and
  5. Freight is in accordance with the actual settlement.
  6. Q: How to pay?
  7. A: T/T 100% deposit before delivery.
  8. Q: What's your MOQ?
  9. A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.
  10. (2) For customized commen products, the MOQ is 10pcs up.
  11. Q: What's the delivery time?
  12. A: (1) For the standard products
  13. For inventory: the delivery is 5 workdays after you place the order.
  14. For customized products: the delivery is 2 -4 weeks after you order contact.
  15. Q: Do you have standard products?
  16. A: Our standard products in stock. as like substrates 4inch 0.35mm.

China Polishing Cylindrical Hollow Silicon Carbide Wafer Ceramic Optical Element SiC supplier

Polishing Cylindrical Hollow Silicon Carbide Wafer Ceramic Optical Element SiC

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