8inch 200mm Silicon Carbide Ingot Semiconductor Substrate 4H N-Type SiC Wafer
Brand Name:ZMKJ
Certification:ROHS
Model Number:200mm SiC wafers
Minimum Order Quantity:1pcs
Delivery Time:1-6weeks
Payment Terms:T/T, Western Union, MoneyGram
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Shanghai Shanghai China
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Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
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SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer4H-N SIC ingots/200mm SiC Wafers 200mm SiC Wafers
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
| 8inch N-type SiC DSP Specs | |||||
| Number | Item | Unit | Production | Research | Dummy |
| 1:parameters | |||||
| 1.1 | polytype | -- | 4H | 4H | 4H |
| 1.2 | surface orientation | ° | <11-20>4±0.5 | <11-20>4±0.5 | <11-20>4±0.5 |
| 2:Electrical parameter | |||||
| 2.1 | dopant | -- | n-type Nitrogen | n-type Nitrogen | n-type Nitrogen |
| 2.2 | resistivity | ohm ·cm | 0.015~0.025 | 0.01~0.03 | NA |
| 3:Mechanical parameter | |||||
| 3.1 | diameter | mm | 200±0.2 | 200±0.2 | 200±0.2 |
| 3.2 | thickness | μm | 500±25 | 500±25 | 500±25 |
| 3.3 | Notch orientation | ° | [1- 100]±5 | [1- 100]±5 | [1- 100]±5 |
| 3.4 | Notch Depth | mm | 1~1.5 | 1~1.5 | 1~1.5 |
| 3.5 | LTV | μm | ≤5(10mm*10mm) | ≤5(10mm*10mm) | ≤10(10mm*10mm) |
| 3.6 | TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | Bow | μm | -25~25 | -45~45 | -65~65 |
| 3.8 | Warp | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 |
The current difficulties in the preparation of 200mm 4H-SiC
crystals mainly involve.
1) The preparation of high-quality 200mm 4H-SiC seed crystals;
2) Large size temperature field non-uniformity and nucleation process control;
3) The transport efficiency and evolution of gaseous components in large size crystal growth systems;
4) Crystal cracking and defect proliferation caused by large size thermal stress increase.
1) The preparation of high-quality 200mm 4H-SiC seed crystals;
2) Large size temperature field non-uniformity and nucleation process control;
3) The transport efficiency and evolution of gaseous components in large size crystal growth systems;
4) Crystal cracking and defect proliferation caused by large size thermal stress increase.
There are three types of SiC power diodes: Schottky diodes (SBD), PIN diodes and junction barrier-controlled Schottky diodes (JBS). Because of the Schottky barrier, SBD has a lower junction barrier height, so SBD has the advantage of low forward voltage. The emergence of SiC SBD has enlarged the application range of SBD from 250V to 1200V. In addition, its characteristics at high temperatures are good, the reverse leakage current does not increase from room temperature to 175 ° C. In the application field of rectifiers above 3kV, SiC PiN and SiC JBS diodes have received much attention due to their higher breakdown voltage, faster switching speed, smaller size, and lighter weight than silicon rectifiers.
SiC power MOSFET devices have ideal gate resistance, high-speed switching performance, low on-resistance, and high stability. It is the preferred device in the field of power devices below 300V. There are reports that a silicon carbide MOSFET with a blocking voltage of 10kV has been successfully developed. Researchers believe that SiC MOSFETs will occupy an advantageous position in the field of 3kV - 5kV.
SiC Insulated Gate Bipolar Transistors (SiC BJT, SiC IGBT) and SiC
Thyristor (SiC Thyristor), SiC P-type IGBT devices with a blocking
voltage of 12 kV have good forward current capability. Compared
with Si bipolar transistors, SiC bipolar transistors have 20-50
times lower switching losses and lower turn-on voltage drops. SiC
BJT is mainly divided into epitaxial emitter BJT and ion
implantation emitter BJT, the typical current gain is between
10-50.
| Properties | unit | Silicon | SiC | GaN |
| Bandgap width | eV | 1.12 | 3.26 | 3.41 |
| Breakdown field | MV/cm | 0.23 | 2.2 | 3.3 |
| Electron mobility | cm^2/Vs | 1400 | 950 | 1500 |
| Drift velocity | 10^7 cm/s | 1 | 2.7 | 2.5 |
| Thermal conductivity | W/cmK | 1.5 | 3.8 | 1.3 |
FAQ:
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) it is fine If you have your own express account ,If not,we could help you ship them and
Freight is in accordance with the actual settlement.
Q: How to pay?
A: T/T 100％ deposit before delivery.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.
(2) For customized commen products, the MOQ is 10pcs up.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 -4 weeks after you order contact.
Q: Do you have standard products?
A: Our standard products in stock. as like substrates 4inch 0.35mm.
8inch 200mm Silicon Carbide Ingot Semiconductor Substrate 4H N-Type SiC Wafer
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