Thermal Oxide Layer SiO2 Wafer Thickness 20um MEMS Optical Communication System

Brand Name:ZMSH
Model Number:Ultra-thick silicon oxide wafer
Minimum Order Quantity:5
Delivery Time:2-4 weeks
Payment Terms:T/T,
Place of Origin:China
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Location: Shanghai Shanghai China
Address: Rm5-616,NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
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Product Details

SiO2 wafer Thermal Oxide Laver Thickness 20um+5% MEMS Optical Communication System

Product Description:

The SIO2 silicon dioxide wafer serves as a foundational element in semiconductor manufacturing. Featuring a thickness ranging from 10μm to 25μm, this crucial substrate is available in 6-inch and 8-inch diameters, ensuring versatility for various applications. Primarily, it acts as an essential insulating layer, playing a pivotal role in microelectronics by providing high dielectric strength. Its refractive index, approximately 1.4458 at 1550nm, ensures optimal performance across diverse applications.

Renowned for its uniformity and purity, this wafer stands as an ideal choice for optical devices, integrated circuits, and microelectronics. Its properties facilitate precise device fabrication processes and support technological advancements. Beyond its foundational role in semiconductor manufacturing, it extends its reliability and functionality to a spectrum of applications, guaranteeing stability and efficiency.

With its exceptional attributes, the SIO2 silicon dioxide wafer continues to drive innovations in semiconductor technology, enabling advancements in fields such as integrated circuits, optoelectronics, and sensor technologies. Its contributions to cutting-edge technologies underscore its significance as a cornerstone material in the realm of semiconductor production.

Features:

  • Product Name: Semiconductor Substrate
  • Refractive Index: 550nm Of 1.4458 ± 0.0001
  • Boiling Point: 2,230° C (4,046° F)
  • Application Areas: Semiconductor Manufacturing, Microelectronics, Optical Devices, Etc.
  • Thickness: 20um,10um-25um
  • Molecular Weight: 60.09
  • Semiconductor Material: Yes
  • Substrate Material: Yes
  • Applications: Semiconductor Manufacturing, Microelectronics, Optical Devices, Etc.

Technical Parameters:

ParameterSpecification
Thickness20um,10um-25um
Density2533 Kg/m-3
Oxide thickness tolerance+/- 5% (both Sides)
Application AreasSemiconductor Manufacturing, Microelectronics, Optical Devices, Etc.
Melting Point1,600° C (2,912° F)
Thermal ConductivityAround 1.4 W/(m·K) @ 300K
Refractive IndexApproximately 1.44
Molecular Weight60.09
Coefficient of Expansion0.5 × 10^-6/°C
Refractive Index550nm Of 1.4458 ± 0.0001
Ultra-thick silicon oxide waferApplications
Surface oxidationUltra-thin wafer
Thermal ConductivityAround 1.4 W/(m·K) @ 300K

Applications:

  1. Thin-Film Transistors: Employed in the production of TFT devices.
  2. Solar Cells: Used as a substrate or insulating layer in photovoltaic technology.
  3. MEMS (Micro-Electro-Mechanical Systems): Crucial for MEMS device development.
  4. Chemical Sensors: Utilized for sensitive chemical detection.
  5. Biomedical Devices: Employed in various biomedical applications.
  6. Photovoltaics: Supports solar cell technology for energy conversion.
  7. Surface Passivation: Aids in semiconductor surface protection.
  8. Waveguides: Used in optical communication and photonics.
  9. Optical Fibers: Integral in optical communication systems.
  10. Gas Sensors: Employed for gas detection and analysis.
  11. Nanostructures: Used as a substrate for nanostructure development.
  12. Capacitors: Utilized in various electrical applications.
  13. DNA Sequencing: Supports applications in genetic research.
  14. Biosensors: Used for biological and chemical analysis.
  15. Microfluidics: Integral in microfluidic device fabrication.
  16. Light-Emitting Diodes (LEDs): Supports LED technology in various applications.
  17. Microprocessors: Essential for the production of microprocessor devices.
Customization:
Semiconductor Substrate

Brand Name: ZMSH

Model Number: Ultra-thick silicon oxide wafer

Place of Origin: China

Our Semiconductor Substrate is designed with high thermal conductivity, surface oxidation and ultra-thick silicon oxide wafer. It has a thermal conductivity of around 1.4 W/(m·K) @ 300K and melting point of 1,600° C (2,912° F). The boiling point is 2,230° C (4,046° F) and the orientation is <100><11><110>. The molecular weight of this substrate is 60.09.

Support and Services:

We provide technical support and service for our Semiconductor Substrate product. Our team of experts is available to answer any questions you may have about the product and its features. We can also provide assistance in troubleshooting any issues you encounter while using the product. We also offer remote assistance for those who need it. Our support team is available during normal business hours, and we can be reached by phone, email, or through our website.

Packing and Shipping:

Packaging and Shipping for Semiconductor Substrate:

  • Packaged products should be handled with care. Use a protective covering such as bubble wrap or foam whenever possible.
  • If possible, use multiple layers of protective covering.
  • Label the package with the contents and destination.
  • Ship the package using an appropriate shipping service. Consider using a service with tracking capabilities.

FAQ:

Q: What is the brand name of Semiconductor Substrate?
A: The brand name is ZMSH.
Q: What is the model number of Semiconductor Substrate?
A: The model number is Ultra-thick silicon oxide wafer.
Q: Where is Semiconductor Substrate made?
A: It is made in China.
Q: What is the purpose of Semiconductor Substrate?
A: Semiconductor Substrate is used in the fabrication of integrated circuits, microelectromechanical systems and other microstructures.
Q: What is the feature of Semiconductor Substrate?
A: The features of Semiconductor Substrate include low thermal expansion coefficient, high thermal conductivity, high mechanical strength and excellent temperature resistance.
China Thermal Oxide Layer SiO2 Wafer Thickness 20um MEMS Optical Communication System supplier

Thermal Oxide Layer SiO2 Wafer Thickness 20um MEMS Optical Communication System

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