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Sapphire Wafer 12inch AL2O3 Customization DSP SSP C plane A plane M plane LED Sapphire substrate
Sapphire is a material of a unique combination of physical, chemical, and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.
Sapphire wafers are a commonly used semiconductor material, usually
referring to alumina (Al2O3) crystals. Here are some of the
characteristics of sapphire wafers:
1. Optical properties:
Sapphire wafers have excellent optical transparency, especially in
the visible and near-infrared spectral range. This makes sapphire
wafers widely used in optical sensors, lasers, and optoelectronic
devices.
2. Hardness and wear resistance:
Sapphire wafers have a very high hardness, second only to diamond,
and therefore have good wear resistance. This property makes
sapphire wafers very useful in applications that require
scratch-resistant and wear-resistant surfaces, such as watch
surface coatings and optical Windows.
3. Chemical stability:
Sapphire wafers have good chemical stability and can resist acid
and alkali corrosion. This makes it advantageous for use in
chemical sensors, biomedical devices, and high temperature/high
pressure environments.
4. Thermal properties:
Sapphire wafers have high thermal conductivity and thermal
capacity, which makes them more stable in high temperature
environments. Therefore, sapphire wafers are an ideal material
choice in high-temperature sensors, laser cooling systems, and
high-temperature electronic devices.
Item | Specification | ||||
---|---|---|---|---|---|
Diameter | 2 inch | 4 inch | 6 inch | 8 inch | 12 inch |
Material | Artificial sapphire( Al2O3 ≥ 99.99%) | ||||
Thickness | 430±15μm | 650±15μm | 1300±20μm | 1300±20μm | 3000±20μm |
Surface orientation | c-plane(0001) | ||||
OF length | 16±1mm | 30±1mm | 47.5±2.5mm | 47.5±2.5mm | *negotiable |
OF orientation | a-plane 0±0.3° | ||||
TTV * | ≦10μm | ≦10μm | ≦15μm | ≦15μm | *negotiable |
BOW * | -10 ~ 0μm | -15 ~ 0μm | -20 ~ 0μm | -25 ~ 0μm | *negotiable |
Warp * | ≦15μm | ≦20μm | ≦25μm | ≦30μm | *negotiable |
Front side finishing | Epi-ready (Ra<0.3nm) | ||||
Back side finishing | Lapping (Ra 0.6 - 1.2μm) | ||||
Packaging | Vacuum packaging in clean room | ||||
Prime grade | High quality cleaning : particle size ≧ 0.3um), ≦ 0.18pcs/cm2, metal contamination ≦ 2E10/cm2 | ||||
Remarks | Customizable specifications: a/ r/ m-plane orientation, off-angle, shape, double side polishing |
1. C-plane sapphire wafers are extensively used for the growth of
wide-bandgap III-V and II-VI semiconductor materials, such as
gallium nitride (GaN), aluminum nitride (AlN), indium nitride
(InN), zinc oxide (ZnO for UV light emission), and tin oxide (SnO2
for UV light emitting materials).
2. Moreover, standard C-plane (0001) sapphire wafers find wide
applications in the preparation of LED white, blue, UV, and deep UV
epitaxial wafers through techniques like metalorganic chemical
vapor deposition (MOCVD), molecular beam epitaxy (MBE),
plasma-enhanced chemical vapor deposition (PECVD), and other
epitaxial growth methods.
3. Standard sapphire wafers can also serve as substrates for
heterojunction bipolar transistors (HBTs), laser diodes (LDs), UV
detectors, nanotubes, and as heat dissipation materials for
high-temperature, high-power, and high-frequency electronic
devices.
We offer customization options for Sapphire substrate in different
sizes, including 1inch, 2inch, 3inch, 4inch, 5inch, 6inch, 8inch,
and12inch diameters. Our Sapphire wafer can be adjusted to meet
your specific requirements, with a diameter tolerance of ≤3%.
1.Utilizing 99.999% high-purity single-crystal Al2O3 optical-grade
material.
2.Specialized CMP (chemical-mechanical polishing) technology is
employed to ensure its cost-effective performance.
3.All crystal orientations exhibit excellent surface quality
(C-plane surface roughness less than 0.2 nm, A-plane, M-plane,
R-plane, etc., less than 0.5 nm).
4.Cleaned in a Class 100 purification area with ultrapure water
exceeding 18 MΩ*cm to ensure superior cleanliness on each wafer
surface.
5.Packaged in boxes of 25 wafers or single-wafer boxes to maximize
customer research flexibility.
6.Each wafer is assigned a product serial number for traceability.
7.Rational and compact cardboard packaging ensures safer
transportation and cost savings.
8.Standard spec wafers are generally available in stock for prompt
delivery.
1. Q: What is the difference between sapphire and silicon wafers?
A: LEDs are the most popular applications for sapphire. The
material is transparent and is an excellent conductor of light. In
comparison, silicon is opaque and does not allow for efficient
light extraction. The semiconductor material is ideal for LEDs,
however, because it is both cheap and transparent.
2. Q:What is sapphire in semiconductor?
A: High purity single crystal (AI2O3), Sapphire is ideal for the
precise and demanding requirements of semiconductor manufacturing,
offering a transparent yet durable, particle-free, cost-effective
solution in aggressive environments that prove too challenging for
lower technology materials.
3 .Q: Why is there silicon on Sapphire?
A: SOS is part of the silicon-on-insulator (SOI) family of CMOS
(complementary MOS) technologies. ) on heated sapphire substrates.
The advantage of sapphire is that it is an excellent electrical
insulator, preventing stray currents caused by radiation from
spreading to nearby circuit elements.
1. 0.1mm Thickness Sapphire Wafers
2.2inch A-Plane Single Crystal Sapphire Wafer Substrates Al2O3
monocrystalline