FP Fabry-Perot Epiwafer InP Substrate Dia 2 3 4 6 Inch Thickness 350-650um InGaAs Doping
Delivery Time:2-4weeks
Payment Terms:T/T
Place of Origin:China
PL Wavelength control:Better than 3nm
PL Wavelength uniformity:Std.Dev better than 1nm @inner 42mm
Thickness control:Better than +3%
Contact Now
Add to Cart
Verified Supplier
Location:
Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Supplier`s last login times:
within 38 hours
Product Details
Company Profile
Product Details
FP(Fabry-Perot)) Epiwafer InP substrate dia 2 3 4 6 inch thickness:350-650um InGaAs doping
FP(Fabry-Perot)) Epiwafer InP substrate's abstract
Fabry-Perot (FP) Epiwafer on Indium Phosphide (InP) substrates is a critical component in the fabrication of high-performance optoelectronic devices, particularly laser diodes used in optical communication systems. The InP substrate offers excellent lattice matching with materials such as InGaAsP, enabling the growth of high-quality epitaxial layers. These wafers typically operate in the 1.3 μm to 1.55 μm wavelength range, making them ideal for fiber-optic communication due to the low-loss characteristics of optical fibers in this spectrum. FP lasers, grown on these epiwafers, are widely used in data center interconnects, environmental sensing, and medical diagnostics, providing cost-effective solutions with good performance. The simpler structure of FP lasers compared to more complex designs like DFB (Distributed Feedback) lasers makes them a popular choice for medium-range communication applications. InP-based FP epiwafers are essential in industries that require high-speed, reliable optical components.
FP(Fabry-Perot)) Epiwafer InP substrate's showcase
FP(Fabry-Perot)) Epiwafer InP substrate's data sheet
FP(Fabry-Perot)) Epiwafer InP substrate's structure
- InP Substrate (Base)
- Buffer Layer (Surface Smoothing)
- Active Region (Quantum Wells)
- Cladding Layers (Optical Confinement)
- P-type and N-type Layers (Carrier Injection)
- Contact Layers (Electrical Contacts)
- Reflective Facets (FP Laser Cavity)
FP(Fabry-Perot)) Epiwafer InP substrate's application
Fabry-Perot (FP) Epiwafers on Indium Phosphide (InP) substrates are widely used in various optoelectronic applications due to their efficient light emission properties, particularly in the 1.3 μm to 1.55 μm wavelength range. Below are the main applications:
1. Fiber-Optic Communication
- Laser Diodes: FP lasers are commonly used as light sources in fiber-optic communication systems, especially for short-to-medium range data transmission. They are crucial in telecom networks, operating at wavelengths that minimize signal loss in optical fibers.
- Transceivers and Optical Modules: FP lasers integrated into optical transceivers allow for the conversion of electrical signals into optical signals for data transmission over fiber-optic networks.
2. Data Center Interconnects
- High-Speed Connectivity: FP lasers in data centers provide high-speed, low-latency optical interconnects between servers and network equipment. They help manage large data volumes with minimal signal degradation.
3. Environmental Sensing and Gas Detection
- Gas Sensors: FP lasers are used in gas sensing systems to detect specific gases, such as CO2 and CH4, by tuning to the absorption wavelengths of these gases. These systems are used for environmental monitoring and industrial safety applications.
4. Medical Diagnostics
- Optical Coherence Tomography (OCT): FP lasers are used in OCT systems for non-invasive medical imaging, particularly in ophthalmology, dermatology, and cardiovascular diagnostics. These systems leverage the high-speed and precision of FP lasers for detailed tissue imaging.
5. LIDAR Systems
- Autonomous Vehicles and Mapping: FP lasers are used in LIDAR (Light Detection and Ranging) systems for applications such as autonomous driving, 3D mapping, and environmental scanning, where high-resolution distance measurements are essential.
6. Photonic Integrated Circuits (PICs)
- Integrated Photonics: FP Epiwafers are foundational materials for developing photonic integrated circuits that integrate multiple photonic devices (e.g., lasers, detectors) onto a single chip for high-speed signal processing and communication.
7. Satellite Communication and Aerospace
- High-Frequency Communication: InP-based FP lasers are used in satellite communication systems for long-distance, high-frequency data transmission in space and aerospace applications.
8. Research and Development
- Prototyping and Testing: FP Epiwafers are used in R&D for developing new optoelectronic devices, improving laser diode performance, and exploring new wavelengths for emerging technologies.
These applications highlight the versatility of FP Epiwafers on InP substrates, which provide efficient, cost-effective solutions in fields such as telecommunications, medical diagnostics, environmental sensing, and high-speed optical systems.
FP(Fabry-Perot)) Epiwafer InP substrate's advantage
Efficient Light Emission in Key Wavelengths:
- FP epiwafers on InP substrates are optimized for emission in the 1.3 μm to 1.55 μm wavelength range, which aligns with the low-loss transmission windows in optical fibers, making them ideal for fiber-optic communication.
High-Speed Performance:
- InP substrates have excellent electron mobility, enabling the FP lasers to achieve high-speed operation and support high-frequency data transmission. This makes them suitable for high-bandwidth applications like data centers and telecommunications.
Cost-Effective Manufacturing:
- Compared to more complex laser structures like Distributed Feedback (DFB) lasers, FP lasers have a simpler design. This results in lower production costs while still delivering good performance for short-to-medium range applications.
Versatile Applications:
- FP epiwafers are used in a wide range of applications, from fiber-optic communication and data center interconnects to environmental sensing, medical diagnostics (OCT), and LIDAR systems. Their versatility is a major advantage across industries.
Simpler Fabrication Process:
- FP lasers are easier to manufacture compared to other types of lasers, such as DFB lasers, due to their reliance on naturally reflective cleaved facets rather than complex gratings, reducing fabrication complexity and cost.
Good Wavelength Flexibility:
- FP lasers can be tuned across a range of wavelengths by adjusting the current or temperature, providing flexibility for different applications, especially in sensing and communication systems.
Low Power Consumption:
- FP lasers based on InP epiwafers tend to have lower power consumption, making them efficient for large-scale deployments in data communication and sensing networks where power efficiency is critical.
FP Fabry-Perot Epiwafer InP Substrate Dia 2 3 4 6 Inch Thickness 350-650um InGaAs Doping
Inquiry Cart
0