808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser Bars

Brand Name:HTOE
Model Number:LDAQ1-0808-0100
Minimum Order Quantity:50 pcs
Delivery Time:15-25 working days
Payment Terms:T/T
Place of Origin:Beijing, China
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Location: Beijing Beijing China
Address: Shahe Industrial Park, Changping District, Beijing, China
Supplier`s last login times: within 27 hours
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100 watt High Power Laser Diode Bar , 808 nm QCW Laser Diode Unmounted Bar


Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

HTOE has been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output
  • Unmounted single emitters up to 2W CW Power
  • Available wavelengths include 635nm, 650nm, 808nm, 980nm and 1064nm

Parameters(25℃)


ParameterUnitLDAQ1-0808-0100
Optical ParameterOperation Mode-QCW
Output Power PoW100
Center Wavelength λcnm808 ± 5
GeometricalFill Factor-87%
Number of Unmounted Single Emitters-100
Electrical ParameterSlope Efficiency EsW/A≥1.2
Threshold Current IthA≤20
Operating Current IfA≤100
Operating Voltage VfV≤3

Notice


1. Item notice: LDAQ1( item model)-****( center wavelength)-****( output power).

2. Data sheet is based on the result of testing under 25℃,pulse width 200μs, frequency 1-100Hz, maximum duty cycle 2%, and typical application 0.4%.

3. Data sheet is based on the CS package testing.

4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.


China 808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser Bars supplier

808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser Bars

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