Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl
Brand Name:Upperbond
Certification:CE, ISO
Model Number:Maker
Minimum Order Quantity:2 pcs
Delivery Time:5-8 days
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RM 18S, 27/F, HO KING COMM CTR, 2-16 FAYUEN ST, MONGKOK KOWLOON, HONG KONG
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Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
1. Source-Drain Ratings and Characteristics
| Parameter | Typ- | Max. | |
| Is | Continuous Source Current (Body Diode) | — | 49 |
| Ism | Pulsed Source Current (Body Diode)① | — | 160 |
| VsD | Diode Forward Voltage | — | 1.3 |
| trr | Reverse Recovery Time | 63 | 95 |
| Qrr | Reverse Recovery Charge | 170 | 260 |
2. Bipolar Junction Transistors
The first bipolar junction transistors were invented by Bell Labs' William Shockley, which applied for patent (2,569,347) on June 26, 1948. On April 12, 1950, Bell Labs chemists Gordon Teal and Morgan Sparks had successfully produced a working bipolar NPN junction amplifying germanium transistor.
3. High-Frequency Transistor
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.
Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl
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