JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery
Brand Name:JUYI
Model Number:JY8N5M
Minimum Order Quantity:10set
Delivery Time:5-8 working days
Payment Terms:L/C, T/T,Paypal
Place of Origin:China
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Location:
Shanghai Shanghai China
Address:
No. 1, lane 1199, yunping road, jiading district, Shanghai,China
Supplier`s last login times:
within 38 hours
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Product Details
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery
GENERAL DESCRIPTION
The product utilizes the advanced planar processing techniques to
achieve the highcell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
power switching application and a wide variety of other
applications.
FEATURES
● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation
APPLICATIONS
● Lighting
● High efficiency switch mode power supplies
PIN DESCRIPTION
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Limit | Unit | |
| VDS | Drain-Source Voltage | 500 | V | |
| VGS | Gate-Source Voltage | ±30 | V | |
| ID | Continuous Drain Current | Tc=25ºC | 8 | A |
| Tc=100ºC | 4.8 | |||
| IDM | Pulsed Drain Current | 30 | A | |
| PD | Maximum Power Dissipation | 80 | W | |
| TJ TSTG | Operating Junction and Storage Temperature Range | -55+150 | ºC | |
| RθJC | Thermal Resistance-Junction to Case | 1.56 | ℃/W | |
Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery
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