BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount

Brand Name:NXP
Model Number:BSH201
Minimum Order Quantity:3000 PCS
Delivery Time:STOCK
Payment Terms:T/T, Western Union , ESCROW
Place of Origin:CHINA
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Location: Shenzhen Guangdong China
Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA
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BSH201 NPN PNP Transistors P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount


P-channel enhancement mode BSH201 MOS transistor


FEATURES SYMBOL QUICK REFERENCE DATA • Low threshold voltage VDS = -60 V • Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V)
GENERAL DESCRIPTION PINNING SOT23
P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has low 1 gate threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain
The BSH201 is supplied in the SOT23 subminiature surface mounting package.


Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
 Transistors - FETs, MOSFETs - Single
ManufacturerNexperia USA Inc.
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.5 Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id1V @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 48V
FET Feature-
Power Dissipation (Max)417mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB


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China BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount supplier

BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount

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