RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

Brand Name:Mitsubishi
Certification:IEC
Model Number:RA30H1317M
Minimum Order Quantity:1 piece
Delivery Time:1-2 working days
Payment Terms:T/T, Western Union, Paypal
Contact Now

Add to Cart

Site Member
Location: Shenzhen Guangdong China
Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Supplier`s last login times: within 48 hours
Product Details Company Profile
Product Details

RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V


DESCRIPTION


The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.


FEATURES

1, Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V) • Pout>30W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

2, Broadband Frequency Range: 135-175MHz

3, Low-Power Control Current IGG=1mA (typ) at VGG=5V

4, Module Size: 66 x 21 x 9.88 mm

5, Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power


List Of Other Electronic Components In Stock
PART NUMBERMFG/BRAND PART NUMBERMFG/BRAND
PTIC330D1016PTE000PARATEK EM638165TS-7GETRONTEC
NC7SV125P5XFAIRCHILD DS1340-3.3DALLAS
XC18V02VQ44CXILINX AK5381ETAKM
EC4404C-TLSANYO SI4700-A15-GMRSILICON
LT1490IS8#PBFLT SY8008DAACSILERGY
EP20K1000EBC652-3ALTERA LQH43CN150K03LMURATA
M29W800DB-70N6ST B30644-D3005-Y940-W23EPCOS
TL062ACSTM ACPM-5508-TR1AVAGO
PM8380-NIPMC W83627EHGWINBOND
ICS954226AGLFTICS STPS3L60UST
IBM39STB04500PIBM M30622MAA-F43GPMIT
EP1K100FC256-2NALTERA 74AC11257DWRTI
ADP3408ACP-2.5-RL7ADI 1N3005BSSI
MAX3140CEI+MAXIM CM2009-00QSCMD
ALC269QREALTEK P80C652EBAPHI
SLF7045T-100M1R8-HTDK MT6225SA/BMTK
NT5CB128M16HP-DINANYA IL1117-ADJIL-SEM
EP1K100FI484-2NALTERA FUSB302UCXFAIRCHI
S29AL004D70BFI020SPANSION 74F02SJXFAIRCHILD
MIC5200-33BMMITSUBIS W89C940FWINBOND

China RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V supplier

RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

Inquiry Cart 0