100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5

Brand Name:Freescale
Certification:IEC
Model Number:MRFE6VP5600HR5
Minimum Order Quantity:1 piece
Delivery Time:1-2 working days
Payment Terms:T/T, Western Union, Paypal
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Location: Shenzhen Guangdong China
Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Supplier`s last login times: within 48 hours
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Product Details

MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230


These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz


Features

1, Unmatched Input and Output Allowing Wide Frequency Range Utilization

2, Device can be used Single--Ended or in a Push--Pull Configuration

3, Qualified Up to a Maximum of 50 VDD Operation

4, Characterized from 30 V to 50 V for Extended Power Range

5, Suitable for Linear Application with Appropriate Biasing

6, Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation

7, Characterized with Series Equivalent Large--Signal Impedance Parameters

8, RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12.

Transistor TypeLDMOS (Dual)
Frequency230MHz
Gain25dB
Voltage - Test50V
Current Rating-
Noise Figure-
Current - Test100mA
Power - Output600W
Voltage - Rated130V
Package / CaseNI-1230
Supplier Device PackageNI-1230
Base Part Number

MRFE6VP5600


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China 100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5 supplier

100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5

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