200V 25A 144W Integrated Circuit IC Chip , IRFB5620PBF N Channel Mosfet Through Hole TO-220AB

Brand Name:IOR
Certification:ROHS
Model Number:IRFB5620PBF
Minimum Order Quantity:20pcs
Delivery Time:2-3 working days
Payment Terms:Western Union, T/T,Paypal
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Location: Shenzhen Guangdong China
Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Supplier`s last login times: within 48 hours
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Product Details

IRFB5620PBF N-Channel MOSFET 200V 25A 144W Through Hole TO-220AB

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs72.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1710pF @ 50V
FET Feature-
Power Dissipation (Max)144W (Tc)
Operating Temperature-55°C ~ 175°C

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China 200V 25A 144W Integrated Circuit IC Chip , IRFB5620PBF N Channel Mosfet Through Hole TO-220AB supplier

200V 25A 144W Integrated Circuit IC Chip , IRFB5620PBF N Channel Mosfet Through Hole TO-220AB

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