IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK

Brand Name:IOR
Certification:CE
Model Number:IRF640NSTRLPBF
Minimum Order Quantity:100 pieces
Delivery Time:1-2 working days
Payment Terms:T/T, Western Union, Paypal
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Location: Shenzhen Guangdong China
Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Supplier`s last login times: within 48 hours
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Product Details

IRF640NSTRLPBF N-Channel Mosfet Transistor 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK


Advanced Process Technology

Dynamic dv/dt Rating 175°C Operating Temperature

Fast Switching Fully Avalanche Rated

Ease of Paralleling

Simple Drive Requirements


Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.


ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1160pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Rds On (Max) @ Id, Vgs150 mOhm @ 11A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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China IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK supplier

IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK

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