Transistor / Integrated Circuit IC 1.25W Power dissipation 2SD822 / D822
Brand Name:Original Brand
Certification:SGS
Model Number:2SD822 / D822
Minimum Order Quantity:100
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:CN
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Location:
Shenzhen Guangdong China
Address:
311EF, B Buliding, Zhengzhong Time Square, Longgang District, Shenzhen City, China.
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within 41 hours
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Product Details
2SD822 / D822 Transistor / Integrated Circuit IC
FEATURES
Power dissipation
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
| Symbol | Parameter | Value | Units |
| VCBO | Collector-Base Voltage | 40 | V |
| VCEO | Collector-Emitter Voltage | 30 | V |
| VEBO | Emitter-Base Voltage | 6 | V |
| IC | Collector Current -Continuous | 3 | A |
| PD | Collector Power Dissipation | 1.25 | W |
| TJ | Junction Temperature | 150 | °C |
| Tstg | Storage Temperature | -55-150 | °C |
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
| Collector-base breakdown voltage | V(BR)CBO | IC = 100μA, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10mA, IB=0 | 30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100μA, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB= 40 V, IE=0 | 1 | μA | ||
| Collector cut-off current | ICEO | VCE= 30 V, IB=0 | 10 | μA | ||
| Emitter cut-off current | IEBO | VEB= 6 V, IC=0 | 1 | μA | ||
| DC current gain | hFE | VCE= 2 V, IC= 1A | 60 | 400 | ||
| Collector-emitter saturation voltage | VCE (sat) | IC= 2A, IB= 0.2 A | 0.5 | V | ||
| Base-emitter saturation voltage | VBE (sat) | IC= 2A, IB= 0.2 A | 1.5 | V | ||
| Transition frequency | fT | VCE= 5V, IC=0.1A f =10MHz | 90 | MHz |
CLASSIFICATION OF hFE
| Rank | R | O | Y | GR |
| Range | 60-120 | 100-200 | 160-320 | 200-400 |
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Transistor / Integrated Circuit IC 1.25W Power dissipation 2SD822 / D822
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