Product Details
200V 43A 3.8W 300W MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL
SMPS MOSFET
FET Type: | N-Channel | Drain To Source Voltage: | 200V |
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Current - Continuous Drain: | 43A | Drive Voltage: | 10V |
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High Light: | high power mosfet transistors,n channel mosfet transistor |
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IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB
SMPS MOSFET
Applications |
l High frequency DC-DC converters |
l TO-220 is available in PbF as Lead-Free |
Benefits |
l Low Gate-to-Drain Charge to Reduce Switching Losses |
l Fully Characterized Capacitance Including Effective COSS to
Simplify Design, (SeeApp. Note AN1001) |
l Fully Characterized Avalanche Voltage and Current |
FET Type | N-Channel | |
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Technology | MOSFET (Metal Oxide) | |
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Drain to Source Voltage (Vdss) | 200V | |
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Current - Continuous Drain (Id) @ 25°C | 43A (Tc) | |
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Drive Voltage (Max Rds On, Min Rds On) | 10V | |
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Rds On (Max) @ Id, Vgs | 54 mOhm @ 26A, 10V | |
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Vgs(th) (Max) @ Id | 5V @ 250µA | |
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Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V | |
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Vgs (Max) | ±20V | |
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Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V | |
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FET Feature | - | |
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Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) | |
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Operating Temperature | -55°C ~ 175°C |
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Company Profile
Shenzhen Huahao Gaosheng Technology Co., Ltd is one of the world '
s leading distributors of Electronic Components . We focus on NXP ,
TI , ST , Microchip , ADI , Infineon , Onsemi , Intel , Micron and
so on . With our own inventory warehours in Hongkong and Shenzhen .
.
With most of employees have 10 years of experience in the
electronic components industry , we have in - depth cooperative
relations with thousands of brand manufacturers and agents .
We can provide customers in various fields including : spot
procurement , bill of materials matching , small batch procurement
, From off the shelf standard electronic products to full custom
solutions , we desire our customers to enjoy a one - stop -
shopping experience .
In addition , we can provide QC inspection for your IC accessories
, if necessary , please contact us 。