Circuit Protection Power Mos Transistor Chip IPD060N03LGATMA1

Brand Name:Infineon Technologies
Model Number:IPD060N03LGATMA1
Minimum Order Quantity:Negotiable
Delivery Time:Can Ship Immediately
Payment Terms:T/T, D/P, D/A, L/C, Western Union, MoneyGram
Price:Negotiable
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Product Details

Field Effect Transistor Chip Discrete Semiconductors Circuit protection IPD060N03LGATMA1


Product range
  • OptiMOSª3Power-Transistor,MOSFET N-CH 30V 50A TO-252
Basic data

Product AttributeAttribute Value
Infineon
Product Category:MOSFET
RoHS:Details
Si
SMD/SMT
TO-252-3
N-Channel
1 Channel
30 V
50 A
6 mOhms
- 20 V, + 20 V
2.2 V
14.4 nC
- 55 C
+ 175 C
56 W
Enhancement
OptiMOS
Reel
Cut Tape
Brand:Infineon Technologies
Configuration:Single
Fall Time:3 ns
Forward Transconductance - Min:34 S
Height:2.3 mm
Length:6.5 mm
Product Type:MOSFET
Rise Time:3 ns
Series:OptiMOS 3
2500
Subcategory:MOSFETs
Transistor Type:1 N-Channel
Typical Turn-Off Delay Time:20 ns
Typical Turn-On Delay Time:5 ns
Width:6.22 mm
Part # Aliases:IPD060N03L G SP000680632
Unit Weight:0.011640 oz
Application
  • Switching applications
  • BLDC Motors
  • Three-Phase Permanent Magnet Synchronous Motors
  • Inverters
  • Half Bridge Drivers
  • Robotic Control Systems
  • Appliances
  • Grid infrastructure
  • EPOS • Home theate
  • Distributed Power Systems
  • Communications/Networking Infrastructure
DOWNLOAD DATASHEET
  • IPD060N03LGATMA1 Field Effect Transistor Chip Discrete Semiconductors Circuit protection
Order Process

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Chip Diagram

China Circuit Protection Power Mos Transistor Chip  IPD060N03LGATMA1 supplier

Circuit Protection Power Mos Transistor Chip IPD060N03LGATMA1

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