FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip

Brand Name:FAIRCHILD
Certification:ISO9001
Model Number:FDB2614
Minimum Order Quantity:>=1pcs
Delivery Time:2-3days
Payment Terms:L/C, D/A, D/P, T/T, Western Union,
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Location: Hong kong China
Address: Flat B5 1/F., Manning Ind. Building, 116-118 How Ming Street, Kwun Tong, Kowloon, Hong Kong
Supplier`s last login times: within 48 hours
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Product Details

FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip


PRODUCT DESCRIPTION


Part number FDB2614 is manufactured by FAIRCHILD and distributed by Stjk. As one of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers.


For more information on FDB2614 detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to contact us. In order to process your enquiry, please add the quantity FDB2614 to your message. Send an email to stjkelec@hotmail.com for a quote now.


PRODUCT PROPERTIES


Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
27mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
99 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
7230 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
260W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
FDB261

China FDB2614 TO-263  MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip supplier

FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip

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