HEF4093B electronics components Quad 2-input NAND Schmitt trigger

HEF4093B electronics components Quad 2-input NAND Schmitt trigger

1. General description

The HEF4093B is a quad two-input NAND gate. Each input has a Schmitt trigger circuit. The gate switches at different points for positive-going and negative-going signals. The difference between the positive voltage (VT+) and the negative voltage (VT) is defined as hysteresis voltage (VH). It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS, or another input.

2. Features and benefits

Schmitt trigger input discrimination

Fully static operation

5 V, 10 V, and 15 V parametric ratings

Standardized symmetrical output characteristics

Specified from -40°C to +85 °C and -40°C to +125°C

Complies with JEDEC standard JESD 13-B

3. Applications

Wave and pulse shapers

Astable multivibrators

Monostable multivibrators

4. Ordering information

Table 1. Ordering information All types operate from -40°C to +125°C

5. Functional diagram

6. Pinning information

6.1 Pinning

6.2 Pin description

Table 2. Pin description

Symbol Pin Description

1A to 4A 1, 5, 8, 12 input

1B to 4B 2, 6, 9, 13 input

1Y to 4Y 3, 4, 10, 11 output

VDD 14 supply voltage

VSS 7 ground (0 V)

7. Functional description

Table 3. Function table

Input Output

nA nB nY

L L H

L H H

H L H

H H L

8. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).

Symbol Parameter Conditions Min Max Unit

VDD supply voltage -0.5 +18 V

IK input clamping current VI < -0.5 V or VI > VDD + 0.5 V - ± 10 mA

VI input voltage -0.5 VDD + 0.5 V

IOK output clamping current VO < 0.5 V or VO > VDD + 0.5 V - ±10 mA

II/O input/output current - ±10 mA

IDD supply current - 50 mA

Tstg storage temperature -65 +150 °C

Tamb ambient temperature -40 +125 °C

Ptot total power dissipation Tamb= -40 °C to +125 °C

DIP14 [1] - 750 mW

SO14 [2] - 500 mW

P power dissipation per output - 100 mW

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