CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

Brand Name:Ti
Model Number:CSD87312Q3E
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Product Details

CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs


FEATURES

  • CommonSourceConn ection
  • Ultr a L o w Drain to Drain On-Resistance
  • Space Saving SON 3.3 x 3.3mm Plastic Package
  • Optimized for 5V Gate Drive
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free APPLICATIONS

APPLICATIONS

  • Adaptor/USB Input Protection for Notebook
  • PCs and Tablets


PRODUCT SUMMARY

TA = 25°C

TYPICAL VALUE

UNIT

VDS


Drain to Source Voltage

30

V

Qg

Gate Charge Total (4.5V)

6.3

nC

Qgd

Gate Charge Gate to Drain

0.7

nC

RDD(on)

Drain to Drain On Resistance (Q1+Q2)

VGS = 4.5V

31

VGS = 8V

27

VGS(th)

Threshold Voltage

1.0

V


ORDERING INFORMATION

Device

Package

Media


Qty

Ship

CSD87312Q3E

SON 3.3 x 3.3mm Plastic Package

13-In ch Reel

2500

Tape and Reel


ABSOLUTE MAXIMUM RATINGS

TA = 25°C

VALUE

UNIT

VDS

Drain to Source Voltage

30

V

VGS

Gate to Source Voltage

+10/-8

V

ID

(1) Continuous Drain Current, TC = 25°C

27

A

IDM

Pulsed Drain Current

(2)

45

A

PD

Power Dissipation

2.5

W

TJ, TSTG

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, single pulse ID =24A,L=0.1mH,RG =25Ω

29

mJ


DESCRIPTION

The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

China CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs supplier

CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

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